| Presentation | 2004/1/16 Luminescent Properties of CaS:Cu,F TFEL Devices on Si Substrate Shintaro Hakamata, Mami Ehara, Haruki Fukada, Hiroko Kominami, Yoichiro Nakanishi, Yoshinori Hatanaka, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | CaS:Cu,F thin films have been prepared aiming at development of blue-emitting thin-film EL device with high luminance and good chromaticity. The dependence of structural and photoluminescent properties of CaS:Cu,F thin films prepared by electron beam on annealing temperature and time after the deposition was investigated. Crystallinity and PL intensity of the films improved significantly by the annealing at temperatures higher than 800℃ for up to 10min. And the improvements of the structural and PL properties were saturated by the annealing for longer than 10min. From above results, it is concluded that the annealing for around 10min is suitable. The thin-film EL device was fabricated on Si substrate using SiO_2 and Y_2O_3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850℃ for 10min at 0.5at% content of Cu showed the blue EL with a peak of 435nm. Furthermore, The device did it at 0.3at% content of Cu was obtained a blue emission with an obvious peak of 425nm, and CIE coordinates of x=0.217, 0.223, although luminance was very weak. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PL / EL / annealing / CaS:Cu,F / insulating layer / buffer layer / Si substrate |
| Paper # | EID2003-53 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2004/1/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Luminescent Properties of CaS:Cu,F TFEL Devices on Si Substrate |
| Sub Title (in English) | |
| Keyword(1) | PL |
| Keyword(2) | EL |
| Keyword(3) | annealing |
| Keyword(4) | CaS:Cu,F |
| Keyword(5) | insulating layer |
| Keyword(6) | buffer layer |
| Keyword(7) | Si substrate |
| 1st Author's Name | Shintaro Hakamata |
| 1st Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University() |
| 2nd Author's Name | Mami Ehara |
| 2nd Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University |
| 3rd Author's Name | Haruki Fukada |
| 3rd Author's Affiliation | Satellite Venture Business Loboratry |
| 4th Author's Name | Hiroko Kominami |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Yoichiro Nakanishi |
| 5th Author's Affiliation | Graduate School of Electronic Science and Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | Yoshinori Hatanaka |
| 6th Author's Affiliation | Department of Electronics and Information Engineering, Aichi University of Technology |
| Date | 2004/1/16 |
| Paper # | EID2003-53 |
| Volume (vol) | vol.103 |
| Number (no) | 593 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |