Presentation | 2003/1/20 Growth and conductivity control of ZnSeTe alloy films by remote hydrogen plasma assisted MOCVD Hiroki Matsui, Toru Aoki, Jiro Temmyo, Yoshinori Hatanaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnSe_xTe_<1-x> alloy films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed although n-butyliodine was introduced as a dopant source in ZnTe films growth. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained by changing the ratio of Se and Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased about lOOΩcm with n-type conductivity by iodine doping. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RPE-MOCVD / ZnSeTe / ZnTe / iodine doping |
Paper # | EID20002-103 |
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Conference Information | |
Committee | EID |
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Conference Date | 2003/1/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth and conductivity control of ZnSeTe alloy films by remote hydrogen plasma assisted MOCVD |
Sub Title (in English) | |
Keyword(1) | RPE-MOCVD |
Keyword(2) | ZnSeTe |
Keyword(3) | ZnTe |
Keyword(4) | iodine doping |
1st Author's Name | Hiroki Matsui |
1st Author's Affiliation | Research Institute of Electronics,Shizuoka University() |
2nd Author's Name | Toru Aoki |
2nd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
3rd Author's Name | Jiro Temmyo |
3rd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
4th Author's Name | Yoshinori Hatanaka |
4th Author's Affiliation | Aichi University of Technology |
Date | 2003/1/20 |
Paper # | EID20002-103 |
Volume (vol) | vol.102 |
Number (no) | 600 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |