Presentation 2003/1/20
Growth and conductivity control of ZnSeTe alloy films by remote hydrogen plasma assisted MOCVD
Hiroki Matsui, Toru Aoki, Jiro Temmyo, Yoshinori Hatanaka,
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Abstract(in English) ZnSe_xTe_<1-x> alloy films were grown by remote plasma enhanced MOCVD for the purpose of obtaining the n-type ZnTe based single crystal and the control of its band-gap energy. The resistivity of ZnTe was not changed although n-butyliodine was introduced as a dopant source in ZnTe films growth. On the other hand, ZnSe_xTe_<1-x> films with the composition ratio x in the range of 0 to 1 have been obtained by changing the ratio of Se and Te source. The resistivity of ZnSe_<0.2>Te_<0.8> film was decreased about lOOΩcm with n-type conductivity by iodine doping. Therefore, ZnSe_xTe_<1-x> films are effective not only band-gap control but also formation of n-type ZnTe based crystal film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RPE-MOCVD / ZnSeTe / ZnTe / iodine doping
Paper # EID20002-103
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Committee EID
Conference Date 2003/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and conductivity control of ZnSeTe alloy films by remote hydrogen plasma assisted MOCVD
Sub Title (in English)
Keyword(1) RPE-MOCVD
Keyword(2) ZnSeTe
Keyword(3) ZnTe
Keyword(4) iodine doping
1st Author's Name Hiroki Matsui
1st Author's Affiliation Research Institute of Electronics,Shizuoka University()
2nd Author's Name Toru Aoki
2nd Author's Affiliation Research Institute of Electronics,Shizuoka University
3rd Author's Name Jiro Temmyo
3rd Author's Affiliation Research Institute of Electronics,Shizuoka University
4th Author's Name Yoshinori Hatanaka
4th Author's Affiliation Aichi University of Technology
Date 2003/1/20
Paper # EID20002-103
Volume (vol) vol.102
Number (no) 600
Page pp.pp.-
#Pages 4
Date of Issue