Presentation 2003/1/20
MOCVD growth of ZnO thin films using Oxygen remote plasma
Atsushi NAKAMURA, Yoshimi SHIMIZU, Toru AOKI, Akira TANAKA, Jiro] TEMMYO,
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Abstract(in English) ZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed.
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Keyword(in English) remote plasma enhanced MOCVD / Oxygen plasma / ZnO / plasma spectrum
Paper # EID20002-102
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Committee EID
Conference Date 2003/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) MOCVD growth of ZnO thin films using Oxygen remote plasma
Sub Title (in English)
Keyword(1) remote plasma enhanced MOCVD
Keyword(2) Oxygen plasma
Keyword(3) ZnO
Keyword(4) plasma spectrum
1st Author's Name Atsushi NAKAMURA
1st Author's Affiliation Graduate School of Electronic Science of Technology,Shizuoka University()
2nd Author's Name Yoshimi SHIMIZU
2nd Author's Affiliation Research Institute of Electronics,Shizuoka University
3rd Author's Name Toru AOKI
3rd Author's Affiliation Research Institute of Electronics,Shizuoka University
4th Author's Name Akira TANAKA
4th Author's Affiliation Research Institute of Electronics,Shizuoka University
5th Author's Name Jiro] TEMMYO
5th Author's Affiliation Research Institute of Electronics,Shizuoka University
Date 2003/1/20
Paper # EID20002-102
Volume (vol) vol.102
Number (no) 600
Page pp.pp.-
#Pages 4
Date of Issue