Presentation | 2003/1/20 MOCVD growth of ZnO thin films using Oxygen remote plasma Atsushi NAKAMURA, Yoshimi SHIMIZU, Toru AOKI, Akira TANAKA, Jiro] TEMMYO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | remote plasma enhanced MOCVD / Oxygen plasma / ZnO / plasma spectrum |
Paper # | EID20002-102 |
Date of Issue |
Conference Information | |
Committee | EID |
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Conference Date | 2003/1/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electronic Information Displays (EID) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | MOCVD growth of ZnO thin films using Oxygen remote plasma |
Sub Title (in English) | |
Keyword(1) | remote plasma enhanced MOCVD |
Keyword(2) | Oxygen plasma |
Keyword(3) | ZnO |
Keyword(4) | plasma spectrum |
1st Author's Name | Atsushi NAKAMURA |
1st Author's Affiliation | Graduate School of Electronic Science of Technology,Shizuoka University() |
2nd Author's Name | Yoshimi SHIMIZU |
2nd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
3rd Author's Name | Toru AOKI |
3rd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
4th Author's Name | Akira TANAKA |
4th Author's Affiliation | Research Institute of Electronics,Shizuoka University |
5th Author's Name | Jiro] TEMMYO |
5th Author's Affiliation | Research Institute of Electronics,Shizuoka University |
Date | 2003/1/20 |
Paper # | EID20002-102 |
Volume (vol) | vol.102 |
Number (no) | 600 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |