| Presentation | 2003/1/20 Growth and emission property of ZnO film by hydrogen remote plasma CVD Yoahimi SHIMIZU, Atsushi NAKAMURA, Toru AOKI, Jiro TEMMYOU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | c-plane ZnO films were grown on a-plane sapphire substrate by remote plasma enhanced chemical vapor deposition using a diethylzinc and oxygen gas with hydrogen plasma radicals, which was generated by rf-hollow cathode jet plasma, in order to decompose the diethylzinc at low temperature. ZnO (0001) films were grown on sapphire (11-20) substrates at substrate temperature 300℃. Deep emission of PL spectra was decreased by control of H_2 and O_2 gas flow ratio. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO / MOCVD / Diethylzinc / Remote plasma |
| Paper # | EID20002-101 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2003/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and emission property of ZnO film by hydrogen remote plasma CVD |
| Sub Title (in English) | |
| Keyword(1) | ZnO |
| Keyword(2) | MOCVD |
| Keyword(3) | Diethylzinc |
| Keyword(4) | Remote plasma |
| 1st Author's Name | Yoahimi SHIMIZU |
| 1st Author's Affiliation | Research Institute of Electronics,Shizuoka University() |
| 2nd Author's Name | Atsushi NAKAMURA |
| 2nd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| 3rd Author's Name | Toru AOKI |
| 3rd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| 4th Author's Name | Jiro TEMMYOU |
| 4th Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| Date | 2003/1/20 |
| Paper # | EID20002-101 |
| Volume (vol) | vol.102 |
| Number (no) | 600 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |