Presentation 2003/1/20
Oxidation process to ZnO from ZnS epitaxial film on Si substrate
Aki MIYAKE, Takato NAKAMURA, Naoto AZUMA, Toru AOKI, Hiroko KOMINAMI, Yoichiro NAKANISHI, Yoshinori HATANAKA,
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Abstract(in English) ZnO epitaxial thin film was obtained on Si substrate by oxidation of ZnS epitaxial thin film deposited on Si substrate. This oxidation process was analyzed by using Gibbs free energy calculation and TG-DTA measurement. TG curve had one step and the weight change showed about 16.4% decrease. DTA curve had one peak. It was shown from calculation result and TG-DTA, ZnS is changed to ZnO by one step. Expected reactions are ZnS+3/20_2→ZnO+SO_2,ZnO+SO_2→ZnO+SO_3,ZnS+1/20_2→ZnO+2/1S_2
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ZnS / ZnO / oxidation / Gibbs free energy / TG-DTA
Paper # EID20002-100
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Committee EID
Conference Date 2003/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Oxidation process to ZnO from ZnS epitaxial film on Si substrate
Sub Title (in English)
Keyword(1) ZnS
Keyword(2) ZnO
Keyword(3) oxidation
Keyword(4) Gibbs free energy
Keyword(5) TG-DTA
1st Author's Name Aki MIYAKE
1st Author's Affiliation Graduate School of Electronic Science and Technology,Shizuoka University()
2nd Author's Name Takato NAKAMURA
2nd Author's Affiliation Faculty of engineering,Shizuoka University
3rd Author's Name Naoto AZUMA
3rd Author's Affiliation Faculty of engineering,Shizuoka University
4th Author's Name Toru AOKI
4th Author's Affiliation Research Institute of Electronics,Shizuoka University
5th Author's Name Hiroko KOMINAMI
5th Author's Affiliation Graduate School of Electronic Science and Technology,Shizuoka University
6th Author's Name Yoichiro NAKANISHI
6th Author's Affiliation Graduate School of Electronic Science and Technology,Shizuoka University:Research Institute of Electronics,Shizuoka University
7th Author's Name Yoshinori HATANAKA
7th Author's Affiliation Aichi University of Technology
Date 2003/1/20
Paper # EID20002-100
Volume (vol) vol.102
Number (no) 600
Page pp.pp.-
#Pages 4
Date of Issue