Presentation 2003/1/20
High-Luminance Thin-Film EL Device Using Mn-activated Y_2O_3-Ga_2O_3 Phosphor
Youhei KOBAYASHI, Yasuyuki SUZUKI, Toshihiro MIYATA, Tadatugu MINAMI,
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Abstract(in English) High-luminance thin-Film electroluminescent devices were fabricated using newly developed Mn-activated (Y_2O_3)_<1-x>-(Ga_2O_3)_x phosphors with a Ga_2O_3 content of 0 to 100 mol.%. Luminances of 7250 cd/m^2 for yellow emission and 1258 cd/m^2 for green emission were obtained in a devices fabricated using a ((Y_2O_3)_<1-x>-(Ga_2O_3)_<0.5>) : Mn and a ((Y_2O_3)_<0.3>-(Ga_2O_3)_<0.7>) : Mn thin-film emitting layer, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) electroluminescence / TFEL device / phosphor / oxide phosphor
Paper # EID20002-96
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Committee EID
Conference Date 2003/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Luminance Thin-Film EL Device Using Mn-activated Y_2O_3-Ga_2O_3 Phosphor
Sub Title (in English)
Keyword(1) electroluminescence
Keyword(2) TFEL device
Keyword(3) phosphor
Keyword(4) oxide phosphor
1st Author's Name Youhei KOBAYASHI
1st Author's Affiliation O.E.Device System RD center,Kanazawa Institute of Technology()
2nd Author's Name Yasuyuki SUZUKI
2nd Author's Affiliation O.E.Device System RD center,Kanazawa Institute of Technology
3rd Author's Name Toshihiro MIYATA
3rd Author's Affiliation O.E.Device System RD center,Kanazawa Institute of Technology
4th Author's Name Tadatugu MINAMI
4th Author's Affiliation O.E.Device System RD center,Kanazawa Institute of Technology
Date 2003/1/20
Paper # EID20002-96
Volume (vol) vol.102
Number (no) 600
Page pp.pp.-
#Pages 4
Date of Issue