| Presentation | 2003/1/20 Suppression of Formation of Sr Vacancies in SrS:Ce Thin Film EL Devices by Alkali Metal Doping Haruki FUKADA, Asuka SASAKURA, Takahiro KIMURA, Koutoku OHMI, Shosaku TANAKA, Hiroshi KOBAYASHI, Yoichirou NAKANISHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Alkali metal doped SrS:Ce,M(M = Na, K, or Rb) thin film EL devices have been prepared by electron-beam evaporation. Alkali metal doping causes suppression of formation of Sr vacancies, and results in decrease of Ce^<3+>-V_Sr complex center formation. Among those dopants, Rb is the most effective. The SrS : Ce,Rb phosphor powder prepared with Ce concentration of 1.0 mol% shows the strongest photoluminescence with the bluish-green luminescence due to isolated Ce^<3+> centers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrS:Ce Thin Film EL Device / Alkali Metal Doping / Rb / SrVacancy / Ce^<3+>-V_ |
| Paper # | EID20002-95 |
| Date of Issue |
| Conference Information | |
| Committee | EID |
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| Conference Date | 2003/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of Formation of Sr Vacancies in SrS:Ce Thin Film EL Devices by Alkali Metal Doping |
| Sub Title (in English) | |
| Keyword(1) | SrS:Ce Thin Film EL Device |
| Keyword(2) | Alkali Metal Doping |
| Keyword(3) | Rb |
| Keyword(4) | SrVacancy |
| Keyword(5) | Ce^<3+>-V_ |
| Keyword(6) | Ce Concentration |
| 1st Author's Name | Haruki FUKADA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University:(Present address) Satellite Venture Business Laboratory,Shizuoka University() |
| 2nd Author's Name | Asuka SASAKURA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University |
| 3rd Author's Name | Takahiro KIMURA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University |
| 4th Author's Name | Koutoku OHMI |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University |
| 5th Author's Name | Shosaku TANAKA |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University |
| 6th Author's Name | Hiroshi KOBAYASHI |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering,Tottori University |
| 7th Author's Name | Yoichirou NAKANISHI |
| 7th Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| Date | 2003/1/20 |
| Paper # | EID20002-95 |
| Volume (vol) | vol.102 |
| Number (no) | 600 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |