| Presentation | 2003/4/8 Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth N. Kawamoto, A. Masuda, I. Hasegawa, Bin Abd Aziz Fakhrul Anwar, Y. Yogoro, N. Matsuo, K. Yamano, H. Matsumura, H. Hamada, K. Shibata, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we clarify the role of hydrogen in the poly-Si film on the Cat-CVD SiN film for its crystal growth by ELA. H_2 concentrations in the SiN film are 2.3, 4.2, 8.2 at%, respectively. For 500mJ/cm^2 and 8shots, Raman peak FWHM drastically increases and some of the poly-Si films disappear by H_2 burst during the ELA for 8.2at%. Spin density of 8.2at% is larger than that of 2.3at%. These results indicate that the hydrogens incorporated in the Si from SiN film during the ELA leave behind the crystal defects in the poly-Si film when they burst into vacuum. For 500mJ/cm^2, although the Δω decreases drastically with increasing the shot number for 2.3 and 4.2at%, it becomes small slowly with the shot number for 8.2at%. The grain size of 2.3at% is larger than that of 4.2at%. We discuss these results by using SPC (solid phase crystallization) model considering the incorporation of the hydrogens and the substrate thermal conductivity. The usefulness of Cat-CVD method in the ELA poly-Si field is also referred. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | polycrystalline / Si excimer laser annealing / Cat-CVD / Hydrogen / SiN substrate / crystal growth mechanism |
| Paper # | ED2003-13,SDM2003-13,OME2003-13 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2003/4/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Behavior of Hydrogens in the poly-Si Film Prepaired by ELA Method : Relationship Between the Concentration of the Hydrogen Molecule in the SiN Film and Crystal growth |
| Sub Title (in English) | |
| Keyword(1) | polycrystalline |
| Keyword(2) | Si excimer laser annealing |
| Keyword(3) | Cat-CVD |
| Keyword(4) | Hydrogen |
| Keyword(5) | SiN substrate |
| Keyword(6) | crystal growth mechanism |
| 1st Author's Name | N. Kawamoto |
| 1st Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ.() |
| 2nd Author's Name | A. Masuda |
| 2nd Author's Affiliation | Japan Advanced Institute of Science and Technology |
| 3rd Author's Name | I. Hasegawa |
| 3rd Author's Affiliation | Materials and Devices Development Center, SANYO Electric Co., Ltd. |
| 4th Author's Name | Bin Abd Aziz Fakhrul Anwar |
| 4th Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 5th Author's Name | Y. Yogoro |
| 5th Author's Affiliation | Japan Advanced Institute of Science and Technology |
| 6th Author's Name | N. Matsuo |
| 6th Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 7th Author's Name | K. Yamano |
| 7th Author's Affiliation | Materials and Devices Development Center, SANYO Electric Co., Ltd. |
| 8th Author's Name | H. Matsumura |
| 8th Author's Affiliation | Japan Advanced Institute of Science and Technology |
| 9th Author's Name | H. Hamada |
| 9th Author's Affiliation | Materials and Devices Development Center, SANYO Electric Co., Ltd. |
| 10th Author's Name | K. Shibata |
| 10th Author's Affiliation | Materials and Devices Development Center, SANYO Electric Co., Ltd. |
| Date | 2003/4/8 |
| Paper # | ED2003-13,SDM2003-13,OME2003-13 |
| Volume (vol) | vol.103 |
| Number (no) | 8 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |