Presentation 2004/1/13
C-Cu-S Synthetic Metal Film by Cooperation Process of Plasma CVD and Sputtering (Organic Material Electronics)
Masanori MIZUNO, Shinzo MORITA,
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Abstract(in English) Conductive C-Cu-S synthetic metal film was successfully formed by co-operation process of plasma chemical vapor deposition (PCVD) using CH_4, SF_6 and Ar mixture gas and sputtering of metal plate on the upper electrode. In the previous works of C-Cu-S film formation, mixed Cu atomic % was increased up to 17 atomic %, but the film was almost insulator. The substrate was placed on the sputtered Cu atom flow line after analysation of plasma process, then the content of Cu atom was increased markedly.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) cooperation process of plasma CVD and sputtering / synthetic metal / CH_4, SF_6 and Ar mixture gas / C-Cu-S film
Paper # OME2003-115
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Committee OME
Conference Date 2004/1/13(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) C-Cu-S Synthetic Metal Film by Cooperation Process of Plasma CVD and Sputtering (Organic Material Electronics)
Sub Title (in English)
Keyword(1) cooperation process of plasma CVD and sputtering
Keyword(2) synthetic metal
Keyword(3) CH_4, SF_6 and Ar mixture gas
Keyword(4) C-Cu-S film
1st Author's Name Masanori MIZUNO
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
2nd Author's Name Shinzo MORITA
2nd Author's Affiliation Graduate School of Engineering, Nagoya University
Date 2004/1/13
Paper # OME2003-115
Volume (vol) vol.103
Number (no) 565
Page pp.pp.-
#Pages 4
Date of Issue