Presentation | 2004/1/13 C-Cu-S Synthetic Metal Film by Cooperation Process of Plasma CVD and Sputtering (Organic Material Electronics) Masanori MIZUNO, Shinzo MORITA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Conductive C-Cu-S synthetic metal film was successfully formed by co-operation process of plasma chemical vapor deposition (PCVD) using CH_4, SF_6 and Ar mixture gas and sputtering of metal plate on the upper electrode. In the previous works of C-Cu-S film formation, mixed Cu atomic % was increased up to 17 atomic %, but the film was almost insulator. The substrate was placed on the sputtered Cu atom flow line after analysation of plasma process, then the content of Cu atom was increased markedly. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | cooperation process of plasma CVD and sputtering / synthetic metal / CH_4, SF_6 and Ar mixture gas / C-Cu-S film |
Paper # | OME2003-115 |
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Conference Information | |
Committee | OME |
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Conference Date | 2004/1/13(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | C-Cu-S Synthetic Metal Film by Cooperation Process of Plasma CVD and Sputtering (Organic Material Electronics) |
Sub Title (in English) | |
Keyword(1) | cooperation process of plasma CVD and sputtering |
Keyword(2) | synthetic metal |
Keyword(3) | CH_4, SF_6 and Ar mixture gas |
Keyword(4) | C-Cu-S film |
1st Author's Name | Masanori MIZUNO |
1st Author's Affiliation | Graduate School of Engineering, Nagoya University() |
2nd Author's Name | Shinzo MORITA |
2nd Author's Affiliation | Graduate School of Engineering, Nagoya University |
Date | 2004/1/13 |
Paper # | OME2003-115 |
Volume (vol) | vol.103 |
Number (no) | 565 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |