Presentation 2003/9/12
Evaluation of Huang-Rhys factors of poly(9,9-dioctylfluorene) thin films by photoluminescence spectroscopy
K Asada, S Ikame, H Naito,
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Abstract(in English) A study of temperature dependence of the strength of electron-phonon interaction, which is evaluated from Huang-Rhys factors in poly(9,9-dioctylfluorene) (PFO) thin films, has been reported. It is found that electron-phonon interaction is enhanced with increasing temperature. This indicates that the conjugation length in PFO is reduced with increasing temperature. The insight into ocnjugation length in annealed and UV light-soaked PFO has also gained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Poly(9,9-dioctylfluorene) (PFO) / annealed PFO / UV light-soaked PFO / Huang-Rhys factor
Paper # OME2003-72
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Committee OME
Conference Date 2003/9/12(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of Huang-Rhys factors of poly(9,9-dioctylfluorene) thin films by photoluminescence spectroscopy
Sub Title (in English)
Keyword(1) Poly(9,9-dioctylfluorene) (PFO)
Keyword(2) annealed PFO
Keyword(3) UV light-soaked PFO
Keyword(4) Huang-Rhys factor
1st Author's Name K Asada
1st Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University.()
2nd Author's Name S Ikame
2nd Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University.
3rd Author's Name H Naito
3rd Author's Affiliation Department of Physics and Electronics, Osaka Prefecture University.
Date 2003/9/12
Paper # OME2003-72
Volume (vol) vol.103
Number (no) 317
Page pp.pp.-
#Pages 5
Date of Issue