Presentation 2004/9/21
Analysis of Electron Transport in Small n-i-n-Diode Using Molecular Dynamics/Ensemble Monte Carlo Simulator
Yoshinari KAMAKURAI, Kenji TANIGUCHI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Electron transport in a small n-i-n diode structure is simulated with the ensemble Monte Carlo/molecular dynamics method. The results are compared to the ballistic theory reported by Bulashenko et al. [Phys. Rev. B61, 5511 (2000)]. It is demonstrated that the current density obtained from the simulation is lower than the prediction of the ballistic theory, and the reason of this discrepancy is discussed in terms of the difference of the potential barrier which is formed by the space charges in the i-layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Monte Carlo simulation / ballistic transport / space charge limitted current / electron-electron interaction / n-i-n diode
Paper # VLD2004-48,SDM2004-172
Date of Issue

Conference Information
Committee VLD
Conference Date 2004/9/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Electron Transport in Small n-i-n-Diode Using Molecular Dynamics/Ensemble Monte Carlo Simulator
Sub Title (in English)
Keyword(1) Monte Carlo simulation
Keyword(2) ballistic transport
Keyword(3) space charge limitted current
Keyword(4) electron-electron interaction
Keyword(5) n-i-n diode
1st Author's Name Yoshinari KAMAKURAI
1st Author's Affiliation Department of Electronics and Information Systems, Osaka University()
2nd Author's Name Kenji TANIGUCHI
2nd Author's Affiliation Department of Electronics and Information Systems, Osaka University
Date 2004/9/21
Paper # VLD2004-48,SDM2004-172
Volume (vol) vol.104
Number (no) 322
Page pp.pp.-
#Pages 5
Date of Issue