Presentation | 2004/9/21 Analysis of Electron Transport in Small n-i-n-Diode Using Molecular Dynamics/Ensemble Monte Carlo Simulator Yoshinari KAMAKURAI, Kenji TANIGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Electron transport in a small n-i-n diode structure is simulated with the ensemble Monte Carlo/molecular dynamics method. The results are compared to the ballistic theory reported by Bulashenko et al. [Phys. Rev. B61, 5511 (2000)]. It is demonstrated that the current density obtained from the simulation is lower than the prediction of the ballistic theory, and the reason of this discrepancy is discussed in terms of the difference of the potential barrier which is formed by the space charges in the i-layer. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Monte Carlo simulation / ballistic transport / space charge limitted current / electron-electron interaction / n-i-n diode |
Paper # | VLD2004-48,SDM2004-172 |
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Committee | VLD |
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Conference Date | 2004/9/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Electron Transport in Small n-i-n-Diode Using Molecular Dynamics/Ensemble Monte Carlo Simulator |
Sub Title (in English) | |
Keyword(1) | Monte Carlo simulation |
Keyword(2) | ballistic transport |
Keyword(3) | space charge limitted current |
Keyword(4) | electron-electron interaction |
Keyword(5) | n-i-n diode |
1st Author's Name | Yoshinari KAMAKURAI |
1st Author's Affiliation | Department of Electronics and Information Systems, Osaka University() |
2nd Author's Name | Kenji TANIGUCHI |
2nd Author's Affiliation | Department of Electronics and Information Systems, Osaka University |
Date | 2004/9/21 |
Paper # | VLD2004-48,SDM2004-172 |
Volume (vol) | vol.104 |
Number (no) | 322 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |