| Presentation | 2004/9/21 Direct Measurement of Stress Dependent Inversion Layer Mobility Using a Novel Test Structure Takeshi OKAGAKI, Motoaki TANIZAWA, Tetsuya UCHIDA, Tatsuya KUNIKIYO, Ken'ichiro SONODA, Motoshige IGARASHI, Kiyoshi ISHIKAWA, Norihiko KOTANI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a novel mobility measurement method which can be applied to industrial sized MOSFETs. The mobility variation caused by Shallow Trench Isolation(STI) stress is evaluated directly. Extracted piezoresistance coefficients in the inversion layer are close to their counterparts in bulk silicon. The stress effect model like that incorporated into BSIM4.3.0 is verified to adequately predict the behavior. Additionally, we have observed for the first time that the inversion layer mobility in <100> channel MOSFETs is less sensitive to the STI stress than that in <110> channel MOSFETs. Therefore, CMOS devices with layouts along the <100> direction is expected to have high performance with reduced source of design complication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | mobility / piezoresistance coefficients / CBCM method / 3D Simulator |
| Paper # | VLD2004-43,SDM2004-167 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2004/9/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Direct Measurement of Stress Dependent Inversion Layer Mobility Using a Novel Test Structure |
| Sub Title (in English) | |
| Keyword(1) | mobility |
| Keyword(2) | piezoresistance coefficients |
| Keyword(3) | CBCM method |
| Keyword(4) | 3D Simulator |
| 1st Author's Name | Takeshi OKAGAKI |
| 1st Author's Affiliation | Renesas Technology Corp.() |
| 2nd Author's Name | Motoaki TANIZAWA |
| 2nd Author's Affiliation | Renesas Technology Corp. |
| 3rd Author's Name | Tetsuya UCHIDA |
| 3rd Author's Affiliation | Renesas Technology Corp. |
| 4th Author's Name | Tatsuya KUNIKIYO |
| 4th Author's Affiliation | Renesas Technology Corp. |
| 5th Author's Name | Ken'ichiro SONODA |
| 5th Author's Affiliation | Renesas Technology Corp. |
| 6th Author's Name | Motoshige IGARASHI |
| 6th Author's Affiliation | Renesas Technology Corp. |
| 7th Author's Name | Kiyoshi ISHIKAWA |
| 7th Author's Affiliation | Renesas Technology Corp. |
| 8th Author's Name | Norihiko KOTANI |
| 8th Author's Affiliation | Faculty of Infrastructural Technologies, Hiroshima International University |
| Date | 2004/9/21 |
| Paper # | VLD2004-43,SDM2004-167 |
| Volume (vol) | vol.104 |
| Number (no) | 322 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |