Presentation 2003/9/22
Compact Modeling of a Flash Memory Cell Including Substrate-Bias-Dependent Hot-Electron Gate Current
Ken'ichiro SONODA, Motoaki TANIZAWA, Satoshi SHIMIZU, Yasuhiro ARAKI, Shinji KAWAI, Taku OGURA, Shin'ichi KOBAYASHI, Kiyoshi ISHIKAWA, Yasuo INOUE, Norihiko KOTANI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We propose a compact model for a flash memory cell that is suitable for SPICE simulation. The model includes a hot-electron gate current model that considers not only Channel Hot Electron (CHE) injection but also CHannel Initiated Secondary Electron (CHISEL) injection to express properly substrate bias dependence. Simulation results of both programming and erasing characteristics for 130nm-technology flash memory cells indicate that our model is useful in designing and optimizing circuit for flash memories.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) flash memory / gate current / program / erase / CHE / CHISE / FN
Paper # VLD2003-63
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Committee VLD
Conference Date 2003/9/22(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Compact Modeling of a Flash Memory Cell Including Substrate-Bias-Dependent Hot-Electron Gate Current
Sub Title (in English)
Keyword(1) flash memory
Keyword(2) gate current
Keyword(3) program
Keyword(4) erase
Keyword(5) CHE
Keyword(6) CHISE
Keyword(7) FN
1st Author's Name Ken'ichiro SONODA
1st Author's Affiliation Renesas Technology Corp.()
2nd Author's Name Motoaki TANIZAWA
2nd Author's Affiliation Renesas Technology Corp.
3rd Author's Name Satoshi SHIMIZU
3rd Author's Affiliation Renesas Technology Corp.
4th Author's Name Yasuhiro ARAKI
4th Author's Affiliation Renesas Technology Corp.
5th Author's Name Shinji KAWAI
5th Author's Affiliation Renesas Technology Corp.
6th Author's Name Taku OGURA
6th Author's Affiliation Renesas Technology Corp.
7th Author's Name Shin'ichi KOBAYASHI
7th Author's Affiliation Renesas Technology Corp.
8th Author's Name Kiyoshi ISHIKAWA
8th Author's Affiliation Renesas Technology Corp.
9th Author's Name Yasuo INOUE
9th Author's Affiliation Renesas Technology Corp.
10th Author's Name Norihiko KOTANI
10th Author's Affiliation Hiroshima Int'l Univ.
Date 2003/9/22
Paper # VLD2003-63
Volume (vol) vol.103
Number (no) 337
Page pp.pp.-
#Pages 6
Date of Issue