Presentation 2003/9/22
Investigation of Surface Orientation and Channel Direction Effects on MOSFET Inversion Carrier Mobility
Tatsuya EZAKI, Hidetatsu NAKAMURA, Toyoji YAMAMOTO, Masami HANE,
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Abstract(in English) We have investigated the effects of surface orientation and channel direction on inversion carrier transport characteristics by adopting an empirical pseudo-potential method incorporating phonon scattering, surface roughness scattering and ionized impurity scattering mechanisms. We found that these effects can be well explained by the real band structures of the quantized carriers, and that this simulation method can accurately reproduce the anisotropy of inversion mobility. Since the calculation based on analytical bands fails to reproduce the anisotropic carrier transport properties, the pseudo-potential method is essential for analyzing the carrier transport characteristics.
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Keyword(in English) Inversion carrier mobility / MOSFET / pseudo-potential method / phonon scattering / surface roughness / scattering / ionized impurity scattering
Paper # VLD2003-54
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Committee VLD
Conference Date 2003/9/22(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of Surface Orientation and Channel Direction Effects on MOSFET Inversion Carrier Mobility
Sub Title (in English)
Keyword(1) Inversion carrier mobility
Keyword(2) MOSFET
Keyword(3) pseudo-potential method
Keyword(4) phonon scattering
Keyword(5) surface roughness
Keyword(6) scattering
Keyword(7) ionized impurity scattering
1st Author's Name Tatsuya EZAKI
1st Author's Affiliation Silicon Systems Research Laboratories, NEC Corporation()
2nd Author's Name Hidetatsu NAKAMURA
2nd Author's Affiliation Silicon Systems Research Laboratories, NEC Corporation
3rd Author's Name Toyoji YAMAMOTO
3rd Author's Affiliation Silicon Systems Research Laboratories, NEC Corporation
4th Author's Name Masami HANE
4th Author's Affiliation Silicon Systems Research Laboratories, NEC Corporation
Date 2003/9/22
Paper # VLD2003-54
Volume (vol) vol.103
Number (no) 337
Page pp.pp.-
#Pages 6
Date of Issue