Presentation | 2003/9/22 Investigation of Surface Orientation and Channel Direction Effects on MOSFET Inversion Carrier Mobility Tatsuya EZAKI, Hidetatsu NAKAMURA, Toyoji YAMAMOTO, Masami HANE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have investigated the effects of surface orientation and channel direction on inversion carrier transport characteristics by adopting an empirical pseudo-potential method incorporating phonon scattering, surface roughness scattering and ionized impurity scattering mechanisms. We found that these effects can be well explained by the real band structures of the quantized carriers, and that this simulation method can accurately reproduce the anisotropy of inversion mobility. Since the calculation based on analytical bands fails to reproduce the anisotropic carrier transport properties, the pseudo-potential method is essential for analyzing the carrier transport characteristics. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Inversion carrier mobility / MOSFET / pseudo-potential method / phonon scattering / surface roughness / scattering / ionized impurity scattering |
Paper # | VLD2003-54 |
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Committee | VLD |
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Conference Date | 2003/9/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Investigation of Surface Orientation and Channel Direction Effects on MOSFET Inversion Carrier Mobility |
Sub Title (in English) | |
Keyword(1) | Inversion carrier mobility |
Keyword(2) | MOSFET |
Keyword(3) | pseudo-potential method |
Keyword(4) | phonon scattering |
Keyword(5) | surface roughness |
Keyword(6) | scattering |
Keyword(7) | ionized impurity scattering |
1st Author's Name | Tatsuya EZAKI |
1st Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation() |
2nd Author's Name | Hidetatsu NAKAMURA |
2nd Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
3rd Author's Name | Toyoji YAMAMOTO |
3rd Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
4th Author's Name | Masami HANE |
4th Author's Affiliation | Silicon Systems Research Laboratories, NEC Corporation |
Date | 2003/9/22 |
Paper # | VLD2003-54 |
Volume (vol) | vol.103 |
Number (no) | 337 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |