| Presentation | 2003/9/22 Impact of Impurity Fluctuation on Transport between metal and semiconductor Kazuya Matsuzawa, Atsuhiro KINOSHITA, Naoki KUSUNOKI, Atsushi YAGISHITA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Influence of impurity fluctuation on electrical characteristics of the Schottky barrier diode and the contact resistance were investigated by using device simulation. In the case of the Schottky barrier diode, the fluctuation of currents under reverse bias depends on the impurity density and the depletion width. It was found that there are some conditions where the fluctuation becomes being maximum. In the case of the contact resistance, the tunneling currents that locally concentrate at the region with high impurity concentration become dominant and the resistance becomes lowered by the impurity fluctuation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Impurity / fluctuation / Schottky / Contact / Simulation |
| Paper # | VLD2003-53 |
| Date of Issue |
| Conference Information | |
| Committee | VLD |
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| Conference Date | 2003/9/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Impurity Fluctuation on Transport between metal and semiconductor |
| Sub Title (in English) | |
| Keyword(1) | Impurity |
| Keyword(2) | fluctuation |
| Keyword(3) | Schottky |
| Keyword(4) | Contact |
| Keyword(5) | Simulation |
| 1st Author's Name | Kazuya Matsuzawa |
| 1st Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba() |
| 2nd Author's Name | Atsuhiro KINOSHITA |
| 2nd Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba |
| 3rd Author's Name | Naoki KUSUNOKI |
| 3rd Author's Affiliation | Semiconductor Company, Toshiba |
| 4th Author's Name | Atsushi YAGISHITA |
| 4th Author's Affiliation | Semiconductor Company, Toshiba |
| Date | 2003/9/22 |
| Paper # | VLD2003-53 |
| Volume (vol) | vol.103 |
| Number (no) | 337 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |