Presentation 2002/11/21
Automated Selective Multi-Threshold Design For Ultra-Low Standby Applications
Kimiyoshi USAMI, Naoyuki KAWABE, Masayuki KOIZUMI, Katsuhiro SETA, Toshiyuki FURUSAWA,
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Abstract(in English) This paper describes an automated design technique to selectively use multi-threshold CMOS (MTCMOS) in a cell-by-cell fashion. MT cells consisting of low-Vth transistors and high-Vth sleep transistors are assigned to critical paths, while high-Vth cells are assigned to non-critical paths. Compared to the conventional MTCMOS, the gate delay is not affected by the discharge patterns of other gates because there is no virtual ground to be shared. We applied this technique to a test chip of a DSP core. The worst path-delay was improved by 14% over the single high-Vth design without increasing standby leakage at 10% area overhead.
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Keyword(in English) Automated Design / Multi-Threshold / Standby Leakage Current
Paper # VLD2002-95
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Committee VLD
Conference Date 2002/11/21(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Automated Selective Multi-Threshold Design For Ultra-Low Standby Applications
Sub Title (in English)
Keyword(1) Automated Design
Keyword(2) Multi-Threshold
Keyword(3) Standby Leakage Current
1st Author's Name Kimiyoshi USAMI
1st Author's Affiliation Toshiba Corporation Semiconductor Company()
2nd Author's Name Naoyuki KAWABE
2nd Author's Affiliation Toshiba Corporation Semiconductor Company
3rd Author's Name Masayuki KOIZUMI
3rd Author's Affiliation Toshiba Corporation Semiconductor Company
4th Author's Name Katsuhiro SETA
4th Author's Affiliation Toshiba Corporation Semiconductor Company
5th Author's Name Toshiyuki FURUSAWA
5th Author's Affiliation Toshiba Microelectronics Corporation
Date 2002/11/21
Paper # VLD2002-95
Volume (vol) vol.102
Number (no) 476
Page pp.pp.-
#Pages 6
Date of Issue