| Presentation | 2004/8/12 A 12.5Gbps Half-rate CMOS CDR Circuit For 10Gbps Network Applications Jun TAKASOH, Tsutomu YOSHIMURA, Harufusa KONDOH, Norio HIGASHISAKA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a true half-rate CMOS CDR circuit suitable for 10Gbps network applications. The CDR adopts a phase detector and a current mode EXOR charge pump with alleviated switching speeds to obtain higher speed margins. A 10.3Gbps CDR for 10Gbps Ethernet has been fabricated using a 0.10um SOI-CMOS process technology. With proposed circuit configuration, the CDR can operate over 12Gbps without error. The jitter tolerance is more than 0.39UI with 4M-80MHz jitter frequency range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | True half-rate / CDR / SOI-CMOS / network application |
| Paper # | SDM2004-131,ICD2004-73 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2004/8/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 12.5Gbps Half-rate CMOS CDR Circuit For 10Gbps Network Applications |
| Sub Title (in English) | |
| Keyword(1) | True half-rate |
| Keyword(2) | CDR |
| Keyword(3) | SOI-CMOS |
| Keyword(4) | network application |
| 1st Author's Name | Jun TAKASOH |
| 1st Author's Affiliation | Optoelectronic Devices Dept., High Frequency and Optical Devices Work, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Tsutomu YOSHIMURA |
| 2nd Author's Affiliation | Microwave Device Development Dept., High Frequency and Optical Devices Work, Mitsubishi Electric Corporation |
| 3rd Author's Name | Harufusa KONDOH |
| 3rd Author's Affiliation | Microwave Device Development Dept., High Frequency and Optical Devices Work, Mitsubishi Electric Corporation |
| 4th Author's Name | Norio HIGASHISAKA |
| 4th Author's Affiliation | Optoelectronic Devices Dept., High Frequency and Optical Devices Work, Mitsubishi Electric Corporation |
| Date | 2004/8/12 |
| Paper # | SDM2004-131,ICD2004-73 |
| Volume (vol) | vol.104 |
| Number (no) | 250 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |