Presentation	2004/4/16 Recent Developments and Future for MRAM Tadahiko SUGIBAYASHI, Shuichi TAHARA, Kenji TSUCHIDA, Hiroaki YODA,
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Abstract(in English)	In future ubiquitous systems, it is prospected that the performance of the nonvolatile memory has a big influence on the performance of a ubiquitous system. Therefore, to attain the superior performance of the nonvolatile memory, many nonvolatile memories of FeRAM, MRAM, PRAM, RRAM, which use material except the silicon, are proposed. Theoretically, MRAM has the characteristics of infinite rewriting tolerance, low operating voltage and wide operational temperature ange. After comparing the characteristic of the MRAM circuitry with that of the other new memory technologies, the recent situation of the MRAM developments is introduced and a future for MRAM is discussed.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	MRAM / Nonvolatile memory
Paper #	ICD2004-10
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Conference Information
Committee	ICD
Conference Date	2004/4/16(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Recent Developments and Future for MRAM
Sub Title (in English)
Keyword(1)	MRAM
Keyword(2)	Nonvolatile memory
1st Author's Name	Tadahiko SUGIBAYASHI
1st Author's Affiliation	()
2nd Author's Name	Shuichi TAHARA
2nd Author's Affiliation
3rd Author's Name	Kenji TSUCHIDA
3rd Author's Affiliation
4th Author's Name	Hiroaki YODA
4th Author's Affiliation
Date	2004/4/16
Paper #	ICD2004-10
Volume (vol)	vol.104
Number (no)	24
Page	pp.pp.-
#Pages	5
Date of Issue