Presentation 2004/7/7
Recent Progress and Prospect of RF CMOS Technology
Toshimasa MATSUOKA, Yoshiyuki SHIMIZU, Sungwoo CHA, Guechol KIM, Masaki HARUOKA, Kenji TANIGUCHI,
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Abstract(in English) Recent progress of RF CMOS technology is remarkable and is expected to continue with device scale-down in future. This paper describes related recent studies as well as technical issues to overcome for more progress of RF CMOS technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RF CMOS / Distortion / Multi-band / Sensor / MEMS
Paper # ICD2004-56
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Conference Date 2004/7/7(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Recent Progress and Prospect of RF CMOS Technology
Sub Title (in English)
Keyword(1) RF CMOS
Keyword(2) Distortion
Keyword(3) Multi-band
Keyword(4) Sensor
Keyword(5) MEMS
1st Author's Name Toshimasa MATSUOKA
1st Author's Affiliation Department of Electronics and Information Systems, Osaka University()
2nd Author's Name Yoshiyuki SHIMIZU
2nd Author's Affiliation Department of Electronics and Information Systems, Osaka University
3rd Author's Name Sungwoo CHA
3rd Author's Affiliation Department of Electronics and Information Systems, Osaka University
4th Author's Name Guechol KIM
4th Author's Affiliation Department of Electronics and Information Systems, Osaka University
5th Author's Name Masaki HARUOKA
5th Author's Affiliation Department of Electronics and Information Systems, Osaka University
6th Author's Name Kenji TANIGUCHI
6th Author's Affiliation Department of Electronics and Information Systems, Osaka University
Date 2004/7/7
Paper # ICD2004-56
Volume (vol) vol.104
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue