| Presentation | 2003/9/5 Self-corrective Device and Architecture to Ensure LSI Operati on at 0.5 V Using Bulk Dynamic Threshold MOSFET with a Self-Adaptive Power Supply Tomohisa OKUNO, Seizo KAKIMOTO, Yasuaki IWASE, Yoshifumi YAOI, Masayuki NAKANO, Shinji TOYOYAMA, Yuichi SATO, Hiroshi KOTAKI, Atsunori KITO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 0.5 V ultra low voltage LSI was realized by following two self-corrective technologies. One is B-DTMOS, making possible a three fold increase in speed, two orders of magnitude reduction in static power and one order of magnitude smaller drive current fluctuation compared to conventional MOSFET. The other is SAPS, enabling a five times higher speed design. A CDMA MF LSI containing 520k transistors was constructed and target operation was obtained by these technologies. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DTMOS / Low power / Matched Filter |
| Paper # | ICD2003-105 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/9/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-corrective Device and Architecture to Ensure LSI Operati on at 0.5 V Using Bulk Dynamic Threshold MOSFET with a Self-Adaptive Power Supply |
| Sub Title (in English) | |
| Keyword(1) | DTMOS |
| Keyword(2) | Low power |
| Keyword(3) | Matched Filter |
| 1st Author's Name | Tomohisa OKUNO |
| 1st Author's Affiliation | Corporate Research and Development Group, Sharp Corporation() |
| 2nd Author's Name | Seizo KAKIMOTO |
| 2nd Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 3rd Author's Name | Yasuaki IWASE |
| 3rd Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 4th Author's Name | Yoshifumi YAOI |
| 4th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 5th Author's Name | Masayuki NAKANO |
| 5th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 6th Author's Name | Shinji TOYOYAMA |
| 6th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 7th Author's Name | Yuichi SATO |
| 7th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 8th Author's Name | Hiroshi KOTAKI |
| 8th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| 9th Author's Name | Atsunori KITO |
| 9th Author's Affiliation | Corporate Research and Development Group, Sharp Corporation |
| Date | 2003/9/5 |
| Paper # | ICD2003-105 |
| Volume (vol) | vol.103 |
| Number (no) | 299 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |