Presentation 2003/9/5
Low Power circuits for wireless communication with thick oxide
Takayasu NORIMATSU, Ken YAMAMOTO, Minoru FUJISHIMA, Kazuhiro TSURUTA,
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Abstract(in English) High-performance on-chip inductor is the key of low power dissipation for RF circuits in CMOS process. Since capacitive coupling between the inductor and a silicon substrate degrades a performance, thick oxide under the inductor is utilized to reduce capacitive coupling. To verify the effectiveness, voltage controlled oscillators and frequency dividers in a 0.5μm CMOS process with thick oxide are fabricated. As a result, low power dissipation RF circuits operating at 1.0 supply without low threshold voltage process are realized.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Thick Oxide / Voltage Controlled Oscillator / Frequency Divider / on-chip inductor
Paper # ICD2003-102
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Committee ICD
Conference Date 2003/9/5(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Power circuits for wireless communication with thick oxide
Sub Title (in English)
Keyword(1) Thick Oxide
Keyword(2) Voltage Controlled Oscillator
Keyword(3) Frequency Divider
Keyword(4) on-chip inductor
1st Author's Name Takayasu NORIMATSU
1st Author's Affiliation School of Frontier Sciences, The University of Tokyo()
2nd Author's Name Ken YAMAMOTO
2nd Author's Affiliation School of Frontier Sciences, The University of Tokyo
3rd Author's Name Minoru FUJISHIMA
3rd Author's Affiliation School of Frontier Sciences, The University of Tokyo
4th Author's Name Kazuhiro TSURUTA
4th Author's Affiliation Research Laboratories, Denso Corporation
Date 2003/9/5
Paper # ICD2003-102
Volume (vol) vol.103
Number (no) 299
Page pp.pp.-
#Pages 6
Date of Issue