| Presentation | 2003/9/5 CMOS Voltage Reference based on Gate Work Function Differences in Poly-Si controlled by Conductivity Type and Impurity Concentration H. Watanabe, S. Ando, H. Aota, M. Dainin, Y. J. Chun, K. Taniguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new CMOS voltage reference circuit consisting of two pairs of transistors is presented. One pair exhibits a threshold voltage difference with a negative temperature coefficient (-0.49 mV/℃), while the other exhibits a positive temperature coefficient (+0.17 mV/℃). The circuit was robust to process variations, exhibited excellent temperature independence and stable output voltage. Aside from conductivity type and impurity concentrations of gate electrodes, transistors in the pairs were identical, meaning that the system was robust with respect to process fluctuations. Measurements of the voltage reference circuit without trimming adjustments revealed that it had excellent output voltage reproducibility, low temperature coefficient and low current consumption. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Voltage reference / Work Function |
| Paper # | ICD2003-95 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/9/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CMOS Voltage Reference based on Gate Work Function Differences in Poly-Si controlled by Conductivity Type and Impurity Concentration |
| Sub Title (in English) | |
| Keyword(1) | Voltage reference |
| Keyword(2) | Work Function |
| 1st Author's Name | H. Watanabe |
| 1st Author's Affiliation | Electronic Devices Company, Ricoh Co. Ltd.() |
| 2nd Author's Name | S. Ando |
| 2nd Author's Affiliation | Electronic Devices Company, Ricoh Co. Ltd. |
| 3rd Author's Name | H. Aota |
| 3rd Author's Affiliation | Electronic Devices Company, Ricoh Co. Ltd. |
| 4th Author's Name | M. Dainin |
| 4th Author's Affiliation | Electronic Devices Company, Ricoh Co. Ltd. |
| 5th Author's Name | Y. J. Chun |
| 5th Author's Affiliation | Electronic Devices Company, Ricoh Co. Ltd. |
| 6th Author's Name | K. Taniguchi |
| 6th Author's Affiliation | Faculty of Engineering, Osaka University |
| Date | 2003/9/5 |
| Paper # | ICD2003-95 |
| Volume (vol) | vol.103 |
| Number (no) | 299 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |