Presentation 2003/8/14
A 21.5dBm Power-Handling, 5GHz Transmit/Receive CMOS Switch
Takahiro OHNAKADO, Satoshi YAMAKAWA, Tatsuo OOMORI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A 21.5dBm power-handling 5GHz transmit/receive CMOS switch is reported. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch, thus realizing this high power-handling capability. Furthermore, despite insertion loss degradation due to double on-resistance with the stacked transistor configuration, a receive-mode insertion loss of as low as 1.44dB at 5GHz is accomplished with the benefit of the insertion loss improvement effects of the DET, in addition to a very low transmit-mode insertion loss of 0.95dB at 5GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Transmit-Receive Switch / CMOS / RF-CMOS / Power-Handling Capability / Insertion Loss / 5GHz
Paper # SDM2003-131,ICD2003-64
Date of Issue

Conference Information
Committee ICD
Conference Date 2003/8/14(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 21.5dBm Power-Handling, 5GHz Transmit/Receive CMOS Switch
Sub Title (in English)
Keyword(1) Transmit-Receive Switch
Keyword(2) CMOS
Keyword(3) RF-CMOS
Keyword(4) Power-Handling Capability
Keyword(5) Insertion Loss
Keyword(6) 5GHz
1st Author's Name Takahiro OHNAKADO
1st Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation()
2nd Author's Name Satoshi YAMAKAWA
2nd Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation
3rd Author's Name Tatsuo OOMORI
3rd Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation
Date 2003/8/14
Paper # SDM2003-131,ICD2003-64
Volume (vol) vol.103
Number (no) 261
Page pp.pp.-
#Pages 6
Date of Issue