Presentation | 2003/8/14 A 21.5dBm Power-Handling, 5GHz Transmit/Receive CMOS Switch Takahiro OHNAKADO, Satoshi YAMAKAWA, Tatsuo OOMORI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 21.5dBm power-handling 5GHz transmit/receive CMOS switch is reported. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch, thus realizing this high power-handling capability. Furthermore, despite insertion loss degradation due to double on-resistance with the stacked transistor configuration, a receive-mode insertion loss of as low as 1.44dB at 5GHz is accomplished with the benefit of the insertion loss improvement effects of the DET, in addition to a very low transmit-mode insertion loss of 0.95dB at 5GHz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Transmit-Receive Switch / CMOS / RF-CMOS / Power-Handling Capability / Insertion Loss / 5GHz |
Paper # | SDM2003-131,ICD2003-64 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2003/8/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 21.5dBm Power-Handling, 5GHz Transmit/Receive CMOS Switch |
Sub Title (in English) | |
Keyword(1) | Transmit-Receive Switch |
Keyword(2) | CMOS |
Keyword(3) | RF-CMOS |
Keyword(4) | Power-Handling Capability |
Keyword(5) | Insertion Loss |
Keyword(6) | 5GHz |
1st Author's Name | Takahiro OHNAKADO |
1st Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation() |
2nd Author's Name | Satoshi YAMAKAWA |
2nd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
3rd Author's Name | Tatsuo OOMORI |
3rd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
Date | 2003/8/14 |
Paper # | SDM2003-131,ICD2003-64 |
Volume (vol) | vol.103 |
Number (no) | 261 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |