Presentation 2003/8/14
Static CMOS Pair Logic Gate with Degraded Input Capacitance
Keisuke MURAYA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) For designing CMOS circuit, a load capacitance is required to be small and driving current(Ids) is required to be large for fast propergation. A width of transistor is regarding to the capacitance and the Ids. In a logic gate, a width of the driving transistor cannot be eliminated due to keep the Ids. But, off-state transistor width can be degraded to reduce load capacitance for the before stage. However, the eliminated transistor cannot drive the after stage rapidly when it's turned on. Then, we studied a method of using this gate with this eliminated tarnsistor. One conventional logic gate is duplicated and reduced the width of P-MOSFET or N-MOSFET for each. And, a pair of these logic gates are used as complemental for fast switching. This paper deals with this pair logic gate to apply entair of circuit. A converting method of conventional logic gate, a catalogue of basic logic gates, a connecting circuit among pair logic and conventional circuit, and a result of simultaion are presented.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CMOS / Static Circuit / Gate Capacitance / Delay / Pair Logic Gate
Paper # SDM2003-123,ICD2003-56
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Committee ICD
Conference Date 2003/8/14(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Static CMOS Pair Logic Gate with Degraded Input Capacitance
Sub Title (in English)
Keyword(1) CMOS
Keyword(2) Static Circuit
Keyword(3) Gate Capacitance
Keyword(4) Delay
Keyword(5) Pair Logic Gate
1st Author's Name Keisuke MURAYA
1st Author's Affiliation FUJITSU Co.Ltd()
Date 2003/8/14
Paper # SDM2003-123,ICD2003-56
Volume (vol) vol.103
Number (no) 261
Page pp.pp.-
#Pages 6
Date of Issue