| Presentation | 2003/8/14 (110)-Surface Strained-SOI CMOS Technology Tomohisa MIZUNO, Naoharu SUGIYAMA, Tsutomu TEZDUKA, Yoshihiko MORIYAMA, Shu NAKAHARAI, Shinichi TAKAGI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed (110) strained-SOI n- and p-MOSFETs on (110) relaxed-SGOI with the Ge content of 25% for higher performance, applying the Ge condensation technique to SiGe layers on (110) SOI wafers. We have demonstrated, for the first time, that the electron and the hole mobility enhancements of (110) strained-SOI devices amount to 23% and 50%, respectively, against to the carrier mobilities of (110) unstrained MOSFETs. The carrier mobilities of (110) strained-SOI strongly depend on the current flow directions. As a result, the electron and the hole mobility ratios of (110) strained-SOI MOSFETs to the universal mobility of (100) bulk-MOSFETs increase up to 81% and 203%, respectively. Especially, this (110) hole mobility enhancement is larger by about 50% than that of (100) strained-SOI, and the current drive unbalance between n- and p-MOS can be reduced. Therefore, (110)-surface strained-SOI technology is also the candidate for higher speed scaled CMOS, optimizing the current flow directions of n- and p-MOS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | (110)-surface / strained-SOI / CMOS / carrier mobility / current flow direction |
| Paper # | SDM2003-121,ICD2003-54 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/8/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | (110)-Surface Strained-SOI CMOS Technology |
| Sub Title (in English) | |
| Keyword(1) | (110)-surface |
| Keyword(2) | strained-SOI |
| Keyword(3) | CMOS |
| Keyword(4) | carrier mobility |
| Keyword(5) | current flow direction |
| 1st Author's Name | Tomohisa MIZUNO |
| 1st Author's Affiliation | MIRAI-ASET() |
| 2nd Author's Name | Naoharu SUGIYAMA |
| 2nd Author's Affiliation | MIRAI-ASET |
| 3rd Author's Name | Tsutomu TEZDUKA |
| 3rd Author's Affiliation | MIRAI-ASET |
| 4th Author's Name | Yoshihiko MORIYAMA |
| 4th Author's Affiliation | MIRAI-ASET |
| 5th Author's Name | Shu NAKAHARAI |
| 5th Author's Affiliation | MIRAI-ASET |
| 6th Author's Name | Shinichi TAKAGI |
| 6th Author's Affiliation | MIRAI-ASET |
| Date | 2003/8/14 |
| Paper # | SDM2003-121,ICD2003-54 |
| Volume (vol) | vol.103 |
| Number (no) | 261 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |