Presentation 2003/8/14
Enhancement of Adjustable Threshold Voltage Range Due to Quantum Confinement Effect in Ultra Thin Body pMOSFETs
Gen TSUTSUI, Toshiharu NAGUMO, Toshiro HIRAMOTO,
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Abstract(in English) The body effect in ultra thin body SOI MOSFETs has been investigated using analytical model and experiments. It is demonstrated for the first time that the adjustable threshold voltage range by substrate bias is enhanced due to the quantum confinement effect in ultra thin body SOI. The enhancement ratio of the adjustable threshold voltage range in a 4.3 nm thick SOI MOSFET is around 10 %. This indicates that ultra thin body MOSFETs are useful not only for suppressing the short channel effects, but also for suppressing the off-leak current in the Variable Threshold CMOS (VTCMOS) scheme.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) body effect factor / quantum confinement effects / ultra thin body SOI MOSFET / hreshold voltage / Variable Threshold CMOS(VTCMOS)
Paper # SDM2003-118,ICD2003-51
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Conference Date 2003/8/14(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Enhancement of Adjustable Threshold Voltage Range Due to Quantum Confinement Effect in Ultra Thin Body pMOSFETs
Sub Title (in English)
Keyword(1) body effect factor
Keyword(2) quantum confinement effects
Keyword(3) ultra thin body SOI MOSFET
Keyword(4) hreshold voltage
Keyword(5) Variable Threshold CMOS(VTCMOS)
1st Author's Name Gen TSUTSUI
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name Toshiharu NAGUMO
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo
3rd Author's Name Toshiro HIRAMOTO
3rd Author's Affiliation Institute of Industrial Science, University of Tokyo
Date 2003/8/14
Paper # SDM2003-118,ICD2003-51
Volume (vol) vol.103
Number (no) 261
Page pp.pp.-
#Pages 5
Date of Issue