| Presentation | 2003/8/14 Enhancement of Adjustable Threshold Voltage Range Due to Quantum Confinement Effect in Ultra Thin Body pMOSFETs Gen TSUTSUI, Toshiharu NAGUMO, Toshiro HIRAMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The body effect in ultra thin body SOI MOSFETs has been investigated using analytical model and experiments. It is demonstrated for the first time that the adjustable threshold voltage range by substrate bias is enhanced due to the quantum confinement effect in ultra thin body SOI. The enhancement ratio of the adjustable threshold voltage range in a 4.3 nm thick SOI MOSFET is around 10 %. This indicates that ultra thin body MOSFETs are useful not only for suppressing the short channel effects, but also for suppressing the off-leak current in the Variable Threshold CMOS (VTCMOS) scheme. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | body effect factor / quantum confinement effects / ultra thin body SOI MOSFET / hreshold voltage / Variable Threshold CMOS(VTCMOS) |
| Paper # | SDM2003-118,ICD2003-51 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/8/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Enhancement of Adjustable Threshold Voltage Range Due to Quantum Confinement Effect in Ultra Thin Body pMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | body effect factor |
| Keyword(2) | quantum confinement effects |
| Keyword(3) | ultra thin body SOI MOSFET |
| Keyword(4) | hreshold voltage |
| Keyword(5) | Variable Threshold CMOS(VTCMOS) |
| 1st Author's Name | Gen TSUTSUI |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Toshiharu NAGUMO |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Toshiro HIRAMOTO |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2003/8/14 |
| Paper # | SDM2003-118,ICD2003-51 |
| Volume (vol) | vol.103 |
| Number (no) | 261 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |