| Presentation | 2003/8/14 Calculation Methodology of Diode Currents in Partially-Depleted SOI MOSFET Michiru HOGYOKU, Toshiaki TSUCHIYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is well-known that the body voltages of partially-depleted SOI MOSFET are affected by the diode currents. In this report, we discuss problems due to round-off error that take place during the diode current calculations based on the drift-diffusion model. It has been found that the distribution of the current densities less than about 30 μA/cm^2 has an unphysical spatial oscillation if none other than the distributions of the electron and hole concentrations is solved explicitly. That unphysical oscillation has been found to be localized inside the source or drain region with high impurity concentrations and to be never seen in the body region. Moreover, it has been found that such an unphysical oscillation can be suppressed if the distributions of the charge densities and of the spatial gradients (or the spatial differences) of the electron and hole concentrations are solved explicitly as well as the distributions of the electron and hole concentrations. Our findings will play an important role in considering calculation methodology of the diode currents in partially-depleted SOI MOSFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | diode current / device simulation / partially-depleted SOI MOSFET |
| Paper # | SDM2003-117,ICD2003-50 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/8/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Calculation Methodology of Diode Currents in Partially-Depleted SOI MOSFET |
| Sub Title (in English) | |
| Keyword(1) | diode current |
| Keyword(2) | device simulation |
| Keyword(3) | partially-depleted SOI MOSFET |
| 1st Author's Name | Michiru HOGYOKU |
| 1st Author's Affiliation | Department of Electronic Functions and System Engineering, Interdisciplinary Graduate School of Science and Engineering, Shimane University:IC Technology Development Department, Seiko Epson Corporation() |
| 2nd Author's Name | Toshiaki TSUCHIYA |
| 2nd Author's Affiliation | Department of Electronic Functions and System Engineering, Interdisciplinary Graduate School of Science and Engineering, Shimane University |
| Date | 2003/8/14 |
| Paper # | SDM2003-117,ICD2003-50 |
| Volume (vol) | vol.103 |
| Number (no) | 261 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |