Presentation | 2003/1/23 High Sensitive Backside Emission Analysis for wafer T. Yoshida, A. Onoyama, T. Koyama, J. Komori, Y. Mashiko, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We devploped a wafer level backside emission analysis system carrying the MCT (Mereury Cadmium Telluride) detector which has high sensitivity in a near-infrared range. This system enables to perform automatically a series of analysis processes from pointing out the failed vector by the Iddq test to detecting the emission at that vector for every chip on a wafer. We confirmed that detection sensitivity of emission from backside was greatly improved with the MCT detector as compared with the conventional detection from topside using a TEG and a roal logic LSI with multiple metal layer. Furthermore, we discussed about the advantages of the wafer level distribut ion analysis in this paper. |
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Committee | ICD |
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Conference Date | 2003/1/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Sensitive Backside Emission Analysis for wafer |
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1st Author's Name | T. Yoshida |
1st Author's Affiliation | ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation() |
2nd Author's Name | A. Onoyama |
2nd Author's Affiliation | Manufacturing Engineering Center, Fine Process Engineering Department, Mitsubishi Electric Corporation |
3rd Author's Name | T. Koyama |
3rd Author's Affiliation | ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation |
4th Author's Name | J. Komori |
4th Author's Affiliation | ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation |
5th Author's Name | Y. Mashiko |
5th Author's Affiliation | ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation |
Date | 2003/1/23 |
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Volume (vol) | vol.102 |
Number (no) | 622 |
Page | pp.pp.- |
#Pages | 6 |
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