Presentation 2003/1/23
High Sensitive Backside Emission Analysis for wafer
T. Yoshida, A. Onoyama, T. Koyama, J. Komori, Y. Mashiko,
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Abstract(in English) We devploped a wafer level backside emission analysis system carrying the MCT (Mereury Cadmium Telluride) detector which has high sensitivity in a near-infrared range. This system enables to perform automatically a series of analysis processes from pointing out the failed vector by the Iddq test to detecting the emission at that vector for every chip on a wafer. We confirmed that detection sensitivity of emission from backside was greatly improved with the MCT detector as compared with the conventional detection from topside using a TEG and a roal logic LSI with multiple metal layer. Furthermore, we discussed about the advantages of the wafer level distribut ion analysis in this paper.
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Conference Date 2003/1/23(1days)
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Language JPN
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Title (in English) High Sensitive Backside Emission Analysis for wafer
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1st Author's Name T. Yoshida
1st Author's Affiliation ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation()
2nd Author's Name A. Onoyama
2nd Author's Affiliation Manufacturing Engineering Center, Fine Process Engineering Department, Mitsubishi Electric Corporation
3rd Author's Name T. Koyama
3rd Author's Affiliation ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation
4th Author's Name J. Komori
4th Author's Affiliation ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation
5th Author's Name Y. Mashiko
5th Author's Affiliation ULSI Development Center, Evolution & Analysis Department, Mitsubishi Electric Corporation
Date 2003/1/23
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Volume (vol) vol.102
Number (no) 622
Page pp.pp.-
#Pages 6
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