Presentation	2003/1/23 Fault Isolation Techniques Using Pseudo Photo Emission Method and Scanning Spreading Resistance Microscopy on SRAM Macro-cells Tatsuya ISHII, Hironao IKEDA,
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Abstract(in English)	To isolate the site of leakage and high resistance on the nano scale SRAM macro-cell, 2 techniques are studied. (1)The pseudo photo emission (originated from transit function of MOS transistor or forward current of diode) provides the exact positioning information on the chip. And the resolution of 0.2μm for observing the photo point originated by the fault was obtained. The isolation of leakage which corresponds to nano-scale is possible. (2)Scanning spreading resistance microscopy technique is available for detecting the high resistance site on the opened circuit. It was proved that its technique could localize the resistance of kΩ-scale.
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Keyword(in English)	SRAM / Emission Microscopy / SSRM / Failure Analysis
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Conference Information
Committee	ICD
Conference Date	2003/1/23(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Fault Isolation Techniques Using Pseudo Photo Emission Method and Scanning Spreading Resistance Microscopy on SRAM Macro-cells
Sub Title (in English)
Keyword(1)	SRAM
Keyword(2)	Emission Microscopy
Keyword(3)	SSRM
Keyword(4)	Failure Analysis
1st Author's Name	Tatsuya ISHII
1st Author's Affiliation	Seiko Epson Corp.()
2nd Author's Name	Hironao IKEDA
2nd Author's Affiliation	Seiko Epson Corp.
Date	2003/1/23
Paper #
Volume (vol)	vol.102
Number (no)	622
Page	pp.pp.-
#Pages	6
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