| Presentation | 2003/1/23 CD Measurement Technology using Electron Beam and Scope of Future Prospect Tadashi Otaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Around 1984, design rule of semiconductor process was 1.3μm or more and optical microscope was being used for pat tern width measurement. This optical technology had a limitation of resolution for process less than 1.3μm process. The CD-SEM was developed and took place of optical microscope. Recent process is now becoming down to smaller than 0.1μm. This report state the scope of future prospect for 0.1μm or smaller feature size semiconductor process measurement as well as reviewing developments of CD-SEM technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SEM / CD-SEM / Low acceleration voltage / High resolution critical dimension measurement |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2003/1/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CD Measurement Technology using Electron Beam and Scope of Future Prospect |
| Sub Title (in English) | |
| Keyword(1) | SEM |
| Keyword(2) | CD-SEM |
| Keyword(3) | Low acceleration voltage |
| Keyword(4) | High resolution critical dimension measurement |
| 1st Author's Name | Tadashi Otaka |
| 1st Author's Affiliation | Hitachi High-Technologies Corporation, Design & Manufacturing Group() |
| Date | 2003/1/23 |
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| Volume (vol) | vol.102 |
| Number (no) | 622 |
| Page | pp.pp.- |
| #Pages | 6 |
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