| Presentation | 2004/5/6 Control of group-III atoms distribution in thin quantum wells by change of growth temperature : X-ray CTR scattering measurements Shinichi HISADOME, Hiroyuki YAMADA, Atsushi KOIZUMI, Ryo OGA, Masao TABUCHI, Yoshikazu TAKEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the heterostructures of III-V compound semiconductors, such as GaInAs/InP and GaInP/GaAs, it is well known that well defined interfaces are difficult to obtain since both of the exchanges of the group-Ill and group-V atoms have to be controlled at the interfaces. In this work, we show that how thin GaInAs and GaInP layers of which composition profiles are well controlled can be obtained when the InP/GaInAs/InP and GaAs/GaInP/GaAs double heterostructures are grown at conventional conditions. Growth temperature dependences of the composition profiles are also investigated to control the composition profiles even when the GaInAs and GaInP layers are as thin as a few molecular layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | heteroepitaxy / OMVPE / X-ray CTR scattering / group-III atom distribution / group-V atom distribution |
| Paper # | ED2004-20,CPM2004-15,SDM2004-20 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/5/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of group-III atoms distribution in thin quantum wells by change of growth temperature : X-ray CTR scattering measurements |
| Sub Title (in English) | |
| Keyword(1) | heteroepitaxy |
| Keyword(2) | OMVPE |
| Keyword(3) | X-ray CTR scattering |
| Keyword(4) | group-III atom distribution |
| Keyword(5) | group-V atom distribution |
| 1st Author's Name | Shinichi HISADOME |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Hiroyuki YAMADA |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Atsushi KOIZUMI |
| 3rd Author's Affiliation | Venture Business Laboratory, EcoTopia Science Institute,Nagoya University |
| 4th Author's Name | Ryo OGA |
| 4th Author's Affiliation | Venture Business Laboratory, EcoTopia Science Institute,Nagoya University |
| 5th Author's Name | Masao TABUCHI |
| 5th Author's Affiliation | Venture Business Laboratory, EcoTopia Science Institute,Nagoya University |
| 6th Author's Name | Yoshikazu TAKEDA |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University:Venture Business Laboratory, EcoTopia Science Institute,Nagoya University |
| Date | 2004/5/6 |
| Paper # | ED2004-20,CPM2004-15,SDM2004-20 |
| Volume (vol) | vol.104 |
| Number (no) | 43 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |