Presentation	2004/9/21 Theoretical Study of Quasi-Ballistic Electron Transport from the Viewpoint of the Kinetic Equation Nobuyuki SANO,
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Abstract(in English)	Quasi-ballistic electron transport in nano-scale semiconductor structures is investigated to clarify the importance of scatterings under room temperature operation. The velocity distribution functions are explicitly calculated for n^+-n-n^+ test structures by solving numerically the classical Boltzmann transport equation (BTE). It is shown that the velocity distribution function obtained from the BTE is rather different from that predicted from ballistic transport and that the number of electrons with negative velocity around the potential barrier grows due to scatterings in the channel region. We conclude that the scatterings cannot be neglected even in nano-scale device structures.
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Keyword(in English)	quasi-ballistic transport / kinetic equation / nano-scale device / dissipation effects
Paper #	VLD2004-46,SDM2004-170
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Conference Information
Committee	SDM
Conference Date	2004/9/21(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Theoretical Study of Quasi-Ballistic Electron Transport from the Viewpoint of the Kinetic Equation
Sub Title (in English)
Keyword(1)	quasi-ballistic transport
Keyword(2)	kinetic equation
Keyword(3)	nano-scale device
Keyword(4)	dissipation effects
1st Author's Name	Nobuyuki SANO
1st Author's Affiliation	Institute of Applied Physics, University of Tsukuba()
Date	2004/9/21
Paper #	VLD2004-46,SDM2004-170
Volume (vol)	vol.104
Number (no)	324
Page	pp.pp.-
#Pages	6
Date of Issue