Presentation	2004/9/21 Gamov method applied to gate tunneling current in MOSFETs Masateru OKAMOTO, Hirosi TAKEDA, Nobuya MORI,
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Abstract(in English)	We have numerically simulated gate tunneling current in MOSFETs. Recently, Price demonstrated that the Gamov formulation can be applied to analysis of the escape of electrons from the channel region into the gate [P.J. Price, Appl. Phys. Lett. 82, 2080 (2003)]. We have integrated the Gamov method into a Schrodinger-Poisson solver for metal-gate n-type MOSFETs. The method is also applied to poly-Si-gate n-type MOSFETs. The numerical results are then compared with experimental results.
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Keyword(in English)	Gate tunneling current / Gamov method / MOSFET
Paper #	VLD2004-44,SDM2004-168
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Committee	SDM
Conference Date	2004/9/21(1days)
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Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Gamov method applied to gate tunneling current in MOSFETs
Sub Title (in English)
Keyword(1)	Gate tunneling current
Keyword(2)	Gamov method
Keyword(3)	MOSFET
1st Author's Name	Masateru OKAMOTO
1st Author's Affiliation	Department of Electronic Engineering, Osaka University()
2nd Author's Name	Hirosi TAKEDA
2nd Author's Affiliation	Department of Electronic Engineering, Osaka University
3rd Author's Name	Nobuya MORI
3rd Author's Affiliation	Department of Electronic Engineering, Osaka University
Date	2004/9/21
Paper #	VLD2004-44,SDM2004-168
Volume (vol)	vol.104
Number (no)	324
Page	pp.pp.-
#Pages	6
Date of Issue