| Presentation | 2004/9/20 Study of a model for FD-SOI MOSFET's RF characteristics Yoshiyuki SHIMIZU, GueChol KIM, Bunsei MURAKAMI, Keisuke UEDA, Yoshihiro UTSUROGI, Sungwoo CHA, Toshimasa MATSUOKA, Kenji TANIGUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A model of FD-SOI MOSFET's RF behavior has been developed for RF circuit design. This paper consider y-parameter of a common-source MOSFET. A measured y-parameter on drain output of FD-SOI MOSFET has different behavior from that of bulk MOSFET. This phenomenon is caused by delay between a drain-source voltage variation and a drain current caused by the voltage, and cannot be observed on bulk devices which have a large body capacitance. We develope a model to explain the tendencies by assigning delay at a drain current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / RF / modeling / FD-SOI / y-parameter |
| Paper # | VLD2004-32,SDM2004-156 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/9/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of a model for FD-SOI MOSFET's RF characteristics |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | RF |
| Keyword(3) | modeling |
| Keyword(4) | FD-SOI |
| Keyword(5) | y-parameter |
| 1st Author's Name | Yoshiyuki SHIMIZU |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | GueChol KIM |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 3rd Author's Name | Bunsei MURAKAMI |
| 3rd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 4th Author's Name | Keisuke UEDA |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 5th Author's Name | Yoshihiro UTSUROGI |
| 5th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 6th Author's Name | Sungwoo CHA |
| 6th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 7th Author's Name | Toshimasa MATSUOKA |
| 7th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 8th Author's Name | Kenji TANIGUCHI |
| 8th Author's Affiliation | Graduate School of Engineering, Osaka University |
| Date | 2004/9/20 |
| Paper # | VLD2004-32,SDM2004-156 |
| Volume (vol) | vol.104 |
| Number (no) | 323 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |