| Presentation | 2004/6/24 Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Seikoh YOSHIDA, Nariaki IKEDA, Jiang LI, Takahiro WADA, Hironari TAKEHARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN and related materials are very effective for a very low loss power switching devices. The GaN is also effective for a fast recovery or freewheeling diode, since they have a very higher switching speed, and a very low recovery charge. We propose a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure. On-voltage of the diode was below O.1 V. By the pinch-off effect using a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / Schottky / FESBD / on-voltage |
| Paper # | ED2004-90,SDM2004-102 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | Schottky |
| Keyword(4) | FESBD |
| Keyword(5) | on-voltage |
| 1st Author's Name | Seikoh YOSHIDA |
| 1st Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd() |
| 2nd Author's Name | Nariaki IKEDA |
| 2nd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd |
| 3rd Author's Name | Jiang LI |
| 3rd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd |
| 4th Author's Name | Takahiro WADA |
| 4th Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd |
| 5th Author's Name | Hironari TAKEHARA |
| 5th Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd |
| Date | 2004/6/24 |
| Paper # | ED2004-90,SDM2004-102 |
| Volume (vol) | vol.104 |
| Number (no) | 156 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |