| Presentation | 2004/6/24 Hydrogen Terminated Diamond RF Transistor(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Hitoshi UMEZAWA, Kazuyuki HIRAMA, Mitsuya SATOH, Hiroshi KAWARADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | RF diamond transistor has been developed on hydrogen-terminated surface channel. Utilizing self-aligned gate fabrication process, parasitic source and drain resistances are reduced. Highest transconductance of 150 mS/mm has been realized in deep sub-micron gate MISFET, which is the highest value in diamond FETs at present. Consequently, the high frequency operation of 22 GHz is realized in 0.2μm gate devices. To improve the power gain, self-aligned gate MISFET with T-shaped gate structure is realized. The MISFET shows low sate resistance of 5～10Ω in 0.2 μm gate, that results in high f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Diamond / Hydrogen-terminated surface channel / MISFET / f_T / f_ |
| Paper # | ED2004-89,SDM2004-101 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen Terminated Diamond RF Transistor(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | Diamond |
| Keyword(2) | Hydrogen-terminated surface channel |
| Keyword(3) | MISFET |
| Keyword(4) | f_T |
| Keyword(5) | f_ |
| 1st Author's Name | Hitoshi UMEZAWA |
| 1st Author's Affiliation | School of Science and Engineering, Waseda University() |
| 2nd Author's Name | Kazuyuki HIRAMA |
| 2nd Author's Affiliation | School of Science and Engineering, Waseda University |
| 3rd Author's Name | Mitsuya SATOH |
| 3rd Author's Affiliation | School of Science and Engineering, Waseda University |
| 4th Author's Name | Hiroshi KAWARADA |
| 4th Author's Affiliation | School of Science and Engineering, Waseda University |
| Date | 2004/6/24 |
| Paper # | ED2004-89,SDM2004-101 |
| Volume (vol) | vol.104 |
| Number (no) | 156 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |