| Presentation | 2004/6/24 Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) H. MURAKAMI, Y. MORIWAKI, M. FUJITAKE, D. AZUMA, S. HIGASHI, S. MIYAZAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated poly-Si/Si_<0.7>Ge_<0.3>/Si stacked gate on 4nm-thick Si0_2/Si(100), and examined the diffusion of Ge and impurities as a function of annealing temperature in the range of 800-1000℃ by energy dispersive X-ray spectroscopy(EDX) and secondary ion mass spectroscopy(SIMS). It is reviealed that germanium atoms diffuse into lOOnm-thick silicon cap layer uniformly after 1000℃ annealing for 30min. and the crystallinity of As^+ doped poly-SiGe is better than that of BF^+_2 doped poly-SiGe. Also, in comparison with poly-Si gate MOS capacitors, we have confirmed that MOS capcitors with p^+ and n^+ SiGe gates show a 0.2V reduction in the fiat-band voltage for p^+ gate and no change for n^+ gate. This result is attributable to the difference in the energy band structure between Si and Si_<0.7>Ge_<0.7>, with no significant change in gate leakage current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | poly-SiGe / diffution / gate stack |
| Paper # | ED2004-87,SDM2004-99 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Session B6 Si-Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | poly-SiGe |
| Keyword(2) | diffution |
| Keyword(3) | gate stack |
| 1st Author's Name | H. MURAKAMI |
| 1st Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima() |
| 2nd Author's Name | Y. MORIWAKI |
| 2nd Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima |
| 3rd Author's Name | M. FUJITAKE |
| 3rd Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima |
| 4th Author's Name | D. AZUMA |
| 4th Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima |
| 5th Author's Name | S. HIGASHI |
| 5th Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima |
| 6th Author's Name | S. MIYAZAKI |
| 6th Author's Affiliation | Graduate School of Advanced Sciences and Matter, Hiroshima |
| Date | 2004/6/24 |
| Paper # | ED2004-87,SDM2004-99 |
| Volume (vol) | vol.104 |
| Number (no) | 156 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |