| Presentation | 2004/6/24 Preparation of Pb(Zr, Ti)O_3 Thin Films by Sol-Gel Technique for Ferroelectric-Gate Thin Film Transistor Applications(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Eisuke TOKUMITSU, Takaaki MIYASAKO, Masaru SENOO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated Pb(Zr,Ti)O3(PZT) thin films by the sol-gel technique for thin film transistor applications. It is found that the PZT films fabricated with low-pressure consolidation process show excellent electrical properties and surface morphologies. A remanent polarization (Pr) and coercive field (E_C) of the PZT thin films crystallized at 600℃ are 35μC/cm^2 and 64kV/cm, respectively. We next apply this PZT film to fabricate thin film transistors using indium tin oxide (ITO) as a channel layer. lt is demonstrated that the PZT/ITO thin film transistor has good transistor characteristics with nonvolatile memory function. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric / Thin film transisitor / Ferroelectric-gate transistor / Pb(Zr,Ti)O_3(PZT) |
| Paper # | ED2004-84,SDM2004-96 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of Pb(Zr, Ti)O_3 Thin Films by Sol-Gel Technique for Ferroelectric-Gate Thin Film Transistor Applications(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric |
| Keyword(2) | Thin film transisitor |
| Keyword(3) | Ferroelectric-gate transistor |
| Keyword(4) | Pb(Zr,Ti)O_3(PZT) |
| 1st Author's Name | Eisuke TOKUMITSU |
| 1st Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology() |
| 2nd Author's Name | Takaaki MIYASAKO |
| 2nd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| 3rd Author's Name | Masaru SENOO |
| 3rd Author's Affiliation | Precision and Intelligence Laboratory, Tokyo Institute of Technology |
| Date | 2004/6/24 |
| Paper # | ED2004-84,SDM2004-96 |
| Volume (vol) | vol.104 |
| Number (no) | 156 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |