Presentation 2004/6/24
Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Ilki HAN, Duchang HEO, Jungil LEE,
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Abstract(in English) We report the improvement of optical performance of InGaAsP/GaAs 1.55 μm multi-quantum well (MQW) laser diode (LD) systems utilizing asymmetric SCH layer. Additional 100 nm InGaAsP layer in n-type SCH region shifted the field distribution from p-side to intrinsic and n-side resulting in almost half of the threshold current density and internal loss compared to those of the same laser diode system with symmetric SCH structure.
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Keyword(in English) MQW LD's / asymmetric SCH / internal loss / internal differential efficiency / threshold current density
Paper # ED2004-75,SDM2004-87
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Committee SDM
Conference Date 2004/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Sub Title (in English)
Keyword(1) MQW LD's
Keyword(2) asymmetric SCH
Keyword(3) internal loss
Keyword(4) internal differential efficiency
Keyword(5) threshold current density
1st Author's Name Ilki HAN
1st Author's Affiliation Nano Device Research center, KIST()
2nd Author's Name Duchang HEO
2nd Author's Affiliation Nano Device Research center, KIST
3rd Author's Name Jungil LEE
3rd Author's Affiliation Nano Device Research center, KIST
Date 2004/6/24
Paper # ED2004-75,SDM2004-87
Volume (vol) vol.104
Number (no) 156
Page pp.pp.-
#Pages 4
Date of Issue