| Presentation | 2004/6/23 Effects of Electric Field on Metal-Induced Lateral Crystallization of Si Films under Limited Ni-Supply Condition(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Gou Nakagawa, Noritoshi Shibata, Tanemasa Asano, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The role of electric field in metal-induced lateral crystallization(MILC) of a-Si under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.61μm/h(no-electric field) to 23.1 μm/h at the positive electrode side and reduced to 2.75 μm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Besides, further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | poly-Si / TFT / Metal-Induced Lateral Crystallization / Needle-like Si / Ni-siliside / electric field |
| Paper # | ED2004-71,SDM2004-83 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2004/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Electric Field on Metal-Induced Lateral Crystallization of Si Films under Limited Ni-Supply Condition(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | poly-Si |
| Keyword(2) | TFT |
| Keyword(3) | Metal-Induced Lateral Crystallization |
| Keyword(4) | Needle-like Si |
| Keyword(5) | Ni-siliside |
| Keyword(6) | electric field |
| 1st Author's Name | Gou Nakagawa |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Noritoshi Shibata |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| 3rd Author's Name | Tanemasa Asano |
| 3rd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 2004/6/23 |
| Paper # | ED2004-71,SDM2004-83 |
| Volume (vol) | vol.104 |
| Number (no) | 155 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |