講演名 | 2004/6/23 Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) , |
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抄録(和) | |
抄録(英) | The characteristics of Ni-Germanosilicide were studied by sheet resistance, Field Emission Scanning Electron Microscope (FE-SEM), X-Ray Diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS). It was found that Ni-Germanosilicide formed using pure-Ni has a very poor thermal stability. After the post-silicidation annealing, severe agglomeration and Ge segregation were occurred and almost all the silicide layer was replaced by oxide and remained Ge compound. That is, there happened abnormal oxidation of Ni-Germanosilicide. To prevent the unintended oxidation or to improve the Ni-Germanosilicide thermal stability, various kinds of triple-layer metal structures were applied in this work and Ti/Ni/TiN triple-layer was found to be very effective structure to prevent the unwanted abnormal oxidation and hence to improve the thermal stability of the Ni-Germanosilicide. |
キーワード(和) | |
キーワード(英) | Salicide / Silicon Germanium (SiGe) / silicide / abnormal oxidation / triple-layer metal |
資料番号 | ED2004-65,SDM2004-77 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2004/6/23(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
サブタイトル(和) | |
キーワード(1)(和/英) | / Salicide |
第 1 著者 氏名(和/英) | / Bin-Feng Huang |
第 1 著者 所属(和/英) | Dept. of Electronics Engineering, Chungnam National University |
発表年月日 | 2004/6/23 |
資料番号 | ED2004-65,SDM2004-77 |
巻番号(vol) | vol.104 |
号番号(no) | 155 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |