| Presentation | 2004/6/23 Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Bin-Feng Huang, Soon-Young Oh, Jang-Gu Yun, Yong-Jin Kim, Hee-Hwan Ji, Yong-Goo Kim, Han-Seob Cha, Sang-Bum Heo, Jeong-Gun Lee, Yoo-Jeong Cho, Yeong-Cheol Kim, Hi-Deok Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The characteristics of Ni-Germanosilicide were studied by sheet resistance, Field Emission Scanning Electron Microscope (FE-SEM), X-Ray Diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS). It was found that Ni-Germanosilicide formed using pure-Ni has a very poor thermal stability. After the post-silicidation annealing, severe agglomeration and Ge segregation were occurred and almost all the silicide layer was replaced by oxide and remained Ge compound. That is, there happened abnormal oxidation of Ni-Germanosilicide. To prevent the unintended oxidation or to improve the Ni-Germanosilicide thermal stability, various kinds of triple-layer metal structures were applied in this work and Ti/Ni/TiN triple-layer was found to be very effective structure to prevent the unwanted abnormal oxidation and hence to improve the thermal stability of the Ni-Germanosilicide. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Salicide / Silicon Germanium (SiGe) / silicide / abnormal oxidation / triple-layer metal |
| Paper # | ED2004-65,SDM2004-77 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of Abnormal Oxidation of Ni-Germanosilicide by High Temperature Post-Silicidation Annealing(Session A3 Si Materails and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | Salicide |
| Keyword(2) | Silicon Germanium (SiGe) |
| Keyword(3) | silicide |
| Keyword(4) | abnormal oxidation |
| Keyword(5) | triple-layer metal |
| 1st Author's Name | Bin-Feng Huang |
| 1st Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University() |
| 2nd Author's Name | Soon-Young Oh |
| 2nd Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| 3rd Author's Name | Jang-Gu Yun |
| 3rd Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| 4th Author's Name | Yong-Jin Kim |
| 4th Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| 5th Author's Name | Hee-Hwan Ji |
| 5th Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| 6th Author's Name | Yong-Goo Kim |
| 6th Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| 7th Author's Name | Han-Seob Cha |
| 7th Author's Affiliation | System IC R&D Division, Hynix Semiconductor Inc. |
| 8th Author's Name | Sang-Bum Heo |
| 8th Author's Affiliation | System IC R&D Division, Hynix Semiconductor Inc. |
| 9th Author's Name | Jeong-Gun Lee |
| 9th Author's Affiliation | System IC R&D Division, Hynix Semiconductor Inc. |
| 10th Author's Name | Yoo-Jeong Cho |
| 10th Author's Affiliation | Dept. of Materials Engineering, Korea University of Technology and Education |
| 11th Author's Name | Yeong-Cheol Kim |
| 11th Author's Affiliation | Dept. of Materials Engineering, Korea University of Technology and Education |
| 12th Author's Name | Hi-Deok Lee |
| 12th Author's Affiliation | Dept. of Electronics Engineering, Chungnam National University |
| Date | 2004/6/23 |
| Paper # | ED2004-65,SDM2004-77 |
| Volume (vol) | vol.104 |
| Number (no) | 155 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |