| Presentation | 2004/6/14 Growth and electrical properties of hafnium silicat films by vapor-liquid hybrid deposition : Growth of silicate films using TEOS precursor Yi XUAN, Daisuke HOJO, Tetsuji YASUDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(O^tC_4H_9)_4 and Si(OC_2H_5)_4 precursors. Film deposition was carried out at room temperature using the vapor-liquid hybrid deposition technique. The C-V curves of the metal-oxide-semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift. The leakage current density was four orders of magnitude lower than SiO_2 reference data. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k / HfO_2 / silicate / TEOS / VALID / ALD |
| Paper # | SDM2004-46 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and electrical properties of hafnium silicat films by vapor-liquid hybrid deposition : Growth of silicate films using TEOS precursor |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | HfO_2 |
| Keyword(3) | silicate |
| Keyword(4) | TEOS |
| Keyword(5) | VALID |
| Keyword(6) | ALD |
| 1st Author's Name | Yi XUAN |
| 1st Author's Affiliation | MIRAI-ASRC, AIST() |
| 2nd Author's Name | Daisuke HOJO |
| 2nd Author's Affiliation | MIRAI-ASRC, AIST |
| 3rd Author's Name | Tetsuji YASUDA |
| 3rd Author's Affiliation | MIRAI-ASRC, AISt |
| Date | 2004/6/14 |
| Paper # | SDM2004-46 |
| Volume (vol) | vol.104 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |