| Presentation | 2004/6/14 Radical Nitridation of PLCVD HfSixOy Gate Dielectrics : Control of Hf composition and nitrogen profile Hideki Nakamura, Prakaipetch Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Huyuki, Sadayoshi Horii, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The high-k hafnium silicates (HfSixOy) were prepared by polyatomic layer chemical vapor deposition (PLCVD) method. Nitrogen was introduced into the samples by plasma nitridation by N2 and Ar carrier gases. The effect of N2 incorporation of high-k HfSixOy on the physical andelectrical properties is reported. The substrate temperature during nitrogen plasma was controlled and kept in the range of 400-600oC. Angle resolvedX-ray photoelectron Spectroscopy (AR-XPS) was used to check chemical composition and nitrogen profile. The effect of nitrogen incorporation in the electrical properties of this nitride HfSixOy samples is analyzed by measuring current-voltage (I-V) and capacitance-voltage (O-V) characteristics |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | hafnium silicates / PLCVD / XPS / remote plasma / radical nitrogen |
| Paper # | SDM2004-45 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Radical Nitridation of PLCVD HfSixOy Gate Dielectrics : Control of Hf composition and nitrogen profile |
| Sub Title (in English) | |
| Keyword(1) | hafnium silicates |
| Keyword(2) | PLCVD |
| Keyword(3) | XPS |
| Keyword(4) | remote plasma |
| Keyword(5) | radical nitrogen |
| 1st Author's Name | Hideki Nakamura |
| 1st Author's Affiliation | Nara Institute of Science and Technology() |
| 2nd Author's Name | Prakaipetch Punchaipetch |
| 2nd Author's Affiliation | Nara Institute of Science and Technology |
| 3rd Author's Name | Hiroshi Yano |
| 3rd Author's Affiliation | Nara Institute of Science and Technology |
| 4th Author's Name | Tomoaki Hatayama |
| 4th Author's Affiliation | Nara Institute of Science and Technology |
| 5th Author's Name | Yukiharu Uraoka |
| 5th Author's Affiliation | Nara Institute of Science and Technology |
| 6th Author's Name | Takashi Huyuki |
| 6th Author's Affiliation | Nara Institute of Science and Technology |
| 7th Author's Name | Sadayoshi Horii |
| 7th Author's Affiliation | Hitachi Kokusai Electric Inc |
| Date | 2004/6/14 |
| Paper # | SDM2004-45 |
| Volume (vol) | vol.104 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |