| Presentation | 2004/6/14 Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-nitrided Si(100) surfaces Hiroshi Nakagawa, Akiio Ohta, Fumihito Takeno, Satoru Nagamachi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the stack structures of HfO_2 electron-beam evaporated on nitrided Si(1OO), the blocking ProPerties of ultrathin SiN_x(x=～1.3,～1.Onm in thickness) against oxidation in dry 0_2 anneal in the temperature range of 300～600℃ has been studied by X-ray Photoelectron Spectroscopy (XPS) and Fourier Transform Infrared Attenuated Total Reflection (FT-IR-ATR). Although～1 nm-thick SiN_x layer grown by NH_3 anneal at 700℃ prior to the HfO_2 evaporation suppresses the oxidation of Si(1OO) in 0_2 annealing at 500℃, the surface oxidation of the ultrathin SiN_x proceeds accompanied with the movement of nitrogen atoms from the oxidized SiN_x surface to the Si surface. As a result, the interfacial oxide layer thickness is increased with no significant changes in nitrogen bonding features at the interface. The interfacial oxide formation was also examined as a function of 0_2 anneal temperature for the stack structure of HfO_2 on nitrided Si(1OO). The control of 0_2 partial pressure is required to avoid the interfacial oxidation during the thermal budget higher than 350℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k / Interfacial Oxide Layer / X-ray Photoelectron Spectroscopy / Fourier Transform Infrared Attenuated Total Reflecton |
| Paper # | SDM2004-42 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH_3-nitrided Si(100) surfaces |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | Interfacial Oxide Layer |
| Keyword(3) | X-ray Photoelectron Spectroscopy |
| Keyword(4) | Fourier Transform Infrared Attenuated Total Reflecton |
| 1st Author's Name | Hiroshi Nakagawa |
| 1st Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Akiio Ohta |
| 2nd Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| 3rd Author's Name | Fumihito Takeno |
| 3rd Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| 4th Author's Name | Satoru Nagamachi |
| 4th Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| 5th Author's Name | Hideki Murakami |
| 5th Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| 6th Author's Name | Seiichiro Higashi |
| 6th Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Graduate School of Advance Sciences of Matter, Hiroshima University |
| Date | 2004/6/14 |
| Paper # | SDM2004-42 |
| Volume (vol) | vol.104 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |