| Presentation | 2004/6/14 Improvement in the Readout Reliability of a Nondestructive Readout FeRAM by Asymmetrical Programming Shinzo Koyama, Yoshihisa Kato, Takayoshi Yamada, Yasuhiro Shimada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A non-destructive readout (NDRO) scheme excluding polarization switching from a ferroelectric random access memory (FeRAM) has been proposed as a solution for extending the number of readout cycles. In the NDRO FeRAM, however, the readout signal is so small that the NDRO operation is sensitive to deformation of the P-V hysteresis loop, which is a manifestation of imprint phenomena. In order to minimize the imprint effect, we introduced an asymmetrical polarization programming scheme. Using this scheme, we demonstrate a reliable NDRO scheme that can provide an FeRAM with an extended number of readout cycles more than 10^<16>. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FeRAM / non-destructive readout / asymmetrical programming / imprint |
| Paper # | SDM2004-35 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/6/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in the Readout Reliability of a Nondestructive Readout FeRAM by Asymmetrical Programming |
| Sub Title (in English) | |
| Keyword(1) | FeRAM |
| Keyword(2) | non-destructive readout |
| Keyword(3) | asymmetrical programming |
| Keyword(4) | imprint |
| 1st Author's Name | Shinzo Koyama |
| 1st Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co Ltd.() |
| 2nd Author's Name | Yoshihisa Kato |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co Ltd. |
| 3rd Author's Name | Takayoshi Yamada |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co Ltd. |
| 4th Author's Name | Yasuhiro Shimada |
| 4th Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co Ltd. |
| Date | 2004/6/14 |
| Paper # | SDM2004-35 |
| Volume (vol) | vol.104 |
| Number (no) | 134 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |