| Presentation | 2004/1/23 Proposal and Experimental Demonstration of MRAM Cell Consisting of Magnetic Tunnel Junction and Negative Differential Resistance Device Tetsuya UEMURA, Satoshi HONMA, Takao MARUKAME, Masafumi YAMAMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two kinds of novel magnetic random access memory (MRAM) cells, which consist of a magnetic tunnel junction (MTJ) and a tunnel diode connected in parallel or in series, are proposed. Their basic operations were successfully confirmed by both simulation and experiment. The negative differential resistance (NDR) characteristics of the tunnel diode can increase the tunneling magnetoresistance (TMR) ratio of the MTJ. The fabricated circuit consisting of the CoFe based double junction MTJ and GaAs based tunnel diode showed that the effective MR ratio was enhanced from its original value of 15 to 890%. In the simulation, a sufficient operating margin of the bias current/voltage was obtained by using the MTJ with its original TMR ratio of more than 30%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MRAM / magnetic tunnel junction / negative differential resistance / tunneling magnetoresistance / tunnel diode |
| Paper # | SDM2003-220 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2004/1/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Proposal and Experimental Demonstration of MRAM Cell Consisting of Magnetic Tunnel Junction and Negative Differential Resistance Device |
| Sub Title (in English) | |
| Keyword(1) | MRAM |
| Keyword(2) | magnetic tunnel junction |
| Keyword(3) | negative differential resistance |
| Keyword(4) | tunneling magnetoresistance |
| Keyword(5) | tunnel diode |
| 1st Author's Name | Tetsuya UEMURA |
| 1st Author's Affiliation | Division of Electronics and Information Engineering, Hokkaido University() |
| 2nd Author's Name | Satoshi HONMA |
| 2nd Author's Affiliation | Division of Electronics and Information Engineering, Hokkaido University |
| 3rd Author's Name | Takao MARUKAME |
| 3rd Author's Affiliation | Division of Electronics and Information Engineering, Hokkaido University |
| 4th Author's Name | Masafumi YAMAMOTO |
| 4th Author's Affiliation | Division of Electronics and Information Engineering, Hokkaido University |
| Date | 2004/1/23 |
| Paper # | SDM2003-220 |
| Volume (vol) | vol.103 |
| Number (no) | 631 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |