Presentation 2004/1/23
Characterization of Carbon Nanotube Field-Effect Transistors Using Optical Spectroscopic Techniques
Yutaka OHNO, Shigeru KISHIMOTO, Takashi MIZUTANI,
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Abstract(in English) In order to understand characteristics of carbon nanotube FETs, it is important to know such properties of the nanotube channel as chirality, quality, and band structure. We have investigated Raman scattering spectroscopy of the SWNTs which were grown on a SiO_2/Si substrate by utilizing position-controlled growth technique, and photocurrent spectroscopy of fabricated carbon nanotube FETs. By using microscopic measurement technique, signals originating from a single SWNT were obtained in both Raman scattering and photocurrent spectroscopies. High G-band/D-band intensity ratio obtained in the Raman scattering spectrum indicated that high quality SWNTs were grown. The diameter distribution of the SWNTs was evaluated as 0.9~2.3 nm from radial breathing mode (RBM) of Raman scattering. The excitation spectrum of photocurrent showed a peak attributed to van Hove singularity. Consequently, it was possible to assign the chirality of the SWNT used as FET channel.
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Keyword(in English) carbon nanotube / FET / Raman scattering / photocurrent / spectroscopy / chirality
Paper # SDM2003-216
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Committee SDM
Conference Date 2004/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of Carbon Nanotube Field-Effect Transistors Using Optical Spectroscopic Techniques
Sub Title (in English)
Keyword(1) carbon nanotube
Keyword(2) FET
Keyword(3) Raman scattering
Keyword(4) photocurrent
Keyword(5) spectroscopy
Keyword(6) chirality
1st Author's Name Yutaka OHNO
1st Author's Affiliation Department of Quantum Engineering, Nagoya University()
2nd Author's Name Shigeru KISHIMOTO
2nd Author's Affiliation Department of Quantum Engineering, Nagoya University
3rd Author's Name Takashi MIZUTANI
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 2004/1/23
Paper # SDM2003-216
Volume (vol) vol.103
Number (no) 631
Page pp.pp.-
#Pages 4
Date of Issue