Presentation 2004/1/23
Evaluation of RF Impedance in GaInP/GaAs Triple Barrier Resonant Tunneling Diodes
Naoya ASAOKA, Masakazu FUKUMITSU, Michihiko SUHARA, Tsugunori OKUMURA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In RF application of resonant tunneling diodes, evaluating accurate RF impedance including parasitic component is important. GaInP/GaAs triple barrier resonant tunneling diodes (TBRTDs) were fabricated and applied DC voltage dependence of impedance up to 6GHz was measured using on wafer proving system. An equivalent circuit analysis is carried out and parameters are evaluated as variable resistance and capacitance.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaInP/GaAs hetrostructure / triple barrier resonant tunneling diodes / RF Impedance measurement / RF equivalent circuit / parasitic component
Paper # SDM2003-214
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Conference Information
Committee SDM
Conference Date 2004/1/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of RF Impedance in GaInP/GaAs Triple Barrier Resonant Tunneling Diodes
Sub Title (in English)
Keyword(1) GaInP/GaAs hetrostructure
Keyword(2) triple barrier resonant tunneling diodes
Keyword(3) RF Impedance measurement
Keyword(4) RF equivalent circuit
Keyword(5) parasitic component
1st Author's Name Naoya ASAOKA
1st Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University()
2nd Author's Name Masakazu FUKUMITSU
2nd Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
3rd Author's Name Michihiko SUHARA
3rd Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
4th Author's Name Tsugunori OKUMURA
4th Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
Date 2004/1/23
Paper # SDM2003-214
Volume (vol) vol.103
Number (no) 631
Page pp.pp.-
#Pages 6
Date of Issue