| Presentation | 2003/4/8 Growth Characteristics of Si-Wire on Metal-Induced Lateral Crystallization Kenji Makihira, Tanemasa Asano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal induced lateral crystallization with a small amount of Ni has been investigated. By reducing the amount of Ni and annealing temperature, Si nano-wires were grown. Si-wires having 100nm width and 10μm long were prepared using a 100nm-thick a-Si film. In the case where a-Si film is thin, wire width was spread as growth proceeds, and growth direction was frequently changed and branched. On the other hand, Si wire had uniform width and rectilinear growth when a-Si film is thick and Si-wires showed stereoscopic growth. In order to ascertain Ni diffusion in a-Si, the dependence of random nucleation density on distance from MILC growth front was investigated. The density of random nuclei was increased near the growth front of MILC and each density profile was able to be fitted with Gaussian distribution. This result was indicated that Ni diffused into a-Si region was important role of MILC growth mechanism. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal induced lateral crystallization / solid-phase crystallization / poly-Si / Si nano-wire |
| Paper # | ED2003-15,SDM2003-15,OME2003-15 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2003/4/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth Characteristics of Si-Wire on Metal-Induced Lateral Crystallization |
| Sub Title (in English) | |
| Keyword(1) | metal induced lateral crystallization |
| Keyword(2) | solid-phase crystallization |
| Keyword(3) | poly-Si |
| Keyword(4) | Si nano-wire |
| 1st Author's Name | Kenji Makihira |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Tanemasa Asano |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 2003/4/8 |
| Paper # | ED2003-15,SDM2003-15,OME2003-15 |
| Volume (vol) | vol.103 |
| Number (no) | 6 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |